Prof. Dr. Xia Zhang received a B.S. and Ph.D. in electromagnetic field and microwave technology from Beijing Univerisity of Posts and Telecommunications (BUPT), Beijing, China, in 1999 and 2005, respectively. She is an Associate Professor with the State Key Laboratory of Information Photonics and Optical Communications, and the Institute of Optical Communications and Optoelectronics (BUPT). Her current interests include the heteroepitaxy of InP on GaAs and GaAs on Si, MOCVD growth of boron-contained III-Vs compound semiconductors, and fabrication of metamorphic photodetector.
Prof. Dr. Xia Zhang received a B.S. and Ph.D. in electromagnetic field and microwave technology from Beijing Univerisity of Posts and Telecommunications (BUPT), Beijing, China, in 1999 and 2005, respectively. She is an Associate Professor with the State Key Laboratory of Information Photonics and Optical Communications, and the Institute of Optical Communications and Optoelectronics (BUPT). Her current interests include the heteroepitaxy of InP on GaAs and GaAs on Si, MOCVD growth of boron-contained III-Vs compound semiconductors, and fabrication of metamorphic photodetector.