Straining to make a transistor: The use of carbon nanotubes (CNTs) as short-channel-length transistors will require control of their chirality, which determines whether they are semiconducting or metallic and if they form strong, low-resistance contacts. Tang et al . fabricated CNT intramolecular transistors by progressive heating and straining of individual CNTs within a transmission electron microscope. Changes to chirality along sections of the nanotube created metallic-to-semiconducting transitions. A semiconducting nanotube channel was covalently bonded to the metallic nanotube source and drain regions. The resulting CNT intramolecular transistors had channel lengths as short as 2.8 nanometers. —PDS

We present a method to both precisely and continuously control the average diameter of single-walled carbon nanotubes in a forest ranging from 1.3 to 3.0[emsp14]nm with ~1 A resolution. The diameter control of the forest was achieved through tuning of the catalyst state (size, density, and composition) using arc plasma deposition of nanoparticles. This 1.7[emsp14]nm control range and 1 A precision exceed the highest reports to date.

We investigated the correlation between growth efficiency and structural parameters of single-walled carbon nanotube (SWCNT) forests and report the existence of a SWCNT “sweet spot” in the CNT diameter and spacing domain for highly efficient synthesis. Only within this region could SWCNTs be grown efficiently. Through the investigation of the growth rates for ∼340 CNT forests spanning diameters from 1.3 to 8.0 nm and average spacing from 5 to 80 nm, this “sweet spot” was found to exist because highly efficient growth was constrained by several mechanistic boundaries that either hindered the formation or reduced the growth rate of SWCNT forests. Specifically, with increased diameter SWCNTs transitioned to multiwalled CNTs (multiwall border), small diameter SWCNTs could only be grown at low growth rates (low efficiency border), sparse SWCNTs lacked the requirements to vertically align (lateral growth border), and high density catalysts could not be prepared (high catalyst density border). As a result, the SWCNTs synthesized within this “sweet spot” possessed a unique set of characteristics vital for the development applications, such as large diameter, long, aligned, defective, and high specific surface area.

Vertically aligned double-walled carbon nanotube (VA-DWCNT) arrays were synthesized by point-arc microwave plasma chemical vapor deposition on Cr/n-Si and SiO(2)/n-Si substrates. The outer tube diameters of VA-DWCNTs are in the range of 2.5-3.8 nm, and the average interlayer spacing is approximately 0.42 nm. The field emission properties of these VA-DWCNTs were studied. It was found that a VA-DWCNT array grown on a Cr/n-Si substrate had better field emission properties as compared with a VA-DWCNT array grown on a SiO(2)/n-Si substrate and randomly oriented DWCNTs, showing a turn-on field of about 0.85 V µm(-1) at the emission current density of 0.1 µA cm(-2) and a threshold field of 1.67 V µm(-1) at the emission current density of 1.0 mA cm(-2). The better field emission performance of the VA-DWCNT array was mainly attributed to the vertical alignment of DWCNTs on the Cr/n-Si substrate and the low contact resistance between CNTs and the Cr/n-Si substrate.