The subject of radio wave propagation in tunnels has gathered attention in recent years, mainly regarding the fading phenomena caused by internal reflections. Several methods have been suggested to describe the propagation inside a tunnel. This work is based on the ray tracing approach, which is useful for structures where the dimensions are orders of magnitude larger than the transmission wavelength. Using image theory, we utilized a multi-ray model to reveal non-dimensional parameters, enabling measurements in down-scaled experiments. We present the results of field experiments in a small concrete pedestrian tunnel with smooth walls for radio frequencies (RF) of 1, 2.4, and 10 GHz, as well as in a down-scaled model, for which millimeter waves (MMWs) were used, to demonstrate the roles of the frequency, polarization, tunnel dimensions, and dielectric properties on the wave propagation. The ray tracing method correlated well with the experimental results measured in the tunnel as well as in a scale model.

The optoelectronic process of light absorption and current formation in photodiodes is shown to be a significant source of optoelectronic chromatic dispersion (OED). Simple design rules are developed for fabricating a photodiode-based dispersion device that possesses large, small, zero, and either positive or negative OED. The OED parameter is proportional to a spectrally-dependent absorption term α⁻¹dα/dλ . Silicon-based devices are predicted to display significant OED throughout the near IR, while Ge and InGaAs have high OED in the C- and L-bands and 1650 nm region, respectively. The OED of a commercial Ge PN photodiode is measured to be 3460 ps/nm at 1560 nm wavelength with 500 kHz modulation, demonstrating 8 pm spectral resolution with the phase-shift technique. Temperature-tuning of the OED in the Ge photodiode is also demonstrated. The ubiquitous photodiode is a tunable OED device, with applications in high-resolution optical spectroscopy and optical sensing.

Optoelectronic chromatic dispersion (OED) has recently been shown to be a significant source of chromatic dispersion in photodiodes. We characterize the OED in a commercial germanium PN-type photodiode and determine the optimum conditions for maximum OED sensitivity and wavelength monitoring. A peak OED sensitivity of 1 deg/nm is measured in a spectral range of 1550–1558 nm with 4 MHz modulation. We also demonstrate an application of OED in fiber Bragg grating (FBG) interrogation. Quasi-static and vibration strains are monitored, with a spectral and strain sensitivity of 1 .25 p m / H z and 1 .08 µ ε / H z , respectively. Photodiode OED can form the basis of inexpensive chip-scale grating-less spectral analysis.

We present a new technique for improving the sensitivity of an interferometer, phase-shift-amplified interferometry (PAI), which is based on two embedded interferometers. The internal interferometer, which is biased in anti-phase, amplifies the phase shift; the external interferometer converts this into an amplified intensity shift. PAI can improve the sensitivity of standard interferometers by an order of magnitude or more. The theory of PAI, including its enhanced immunity to relative intensity noise, phase noise, and other post-detection noise and distortion components, is presented. We experimentally demonstrate a phase-shift amplification factor of 11.

The spectral sensitivity of photodiode-based optoelectronic chromatic dispersion is enhanced by phase-shift amplification using RF interferometry. With phase-shift amplification of G = 4 ⋅ 10 4 , a peak phase-shift sensitivity of Δθ = 27 deg/pm is achieved, corresponding to a spectral resolution of Δλ _res = 1 fm. This all-electronic solid-state technology can serve as an on-chip inexpensive technique for femtometer-resolved wavelength monitoring.

It is known that PN-type photodiodes possess high optoelectronic chromatic dispersion (OED). Here we present a theoretical and experimental study of OED in PIN-type photodiodes. Applying the modulation phase-shift technique, a Ge PIN photodiode exhibits ∼0.5 deg/nm phase-shift sensitivity at 10 MHz modulation, corresponding to a dispersion of 1.4 ×10⁹ps/(nm ×km), many orders of magnitude larger than high-dispersion optical materials such as chalcogenide glass. A striking feature of the PIN device is the ability to tune the amount and sign of the OED through the bias voltage. Electronic tuning between −0.8 deg/nm and +0.5 deg/nm is shown. The PIN photodiode is an on-chip device possessing significant tunable dispersion for applications in optical sensing and spectroscopy.