This paper reports on a 1.3-μm reflection insensitive transmission with a quantum dot laser directly grown on silicon in presence of strong optical feedback. Results show a penaltyfree transmission at 10 GHz under external modulation with -7.4 dB optical feedback. The feedback insensitivity results from the low linewidth enhancement factor, the high damping, the absence of off-resonance emission states, and the shorter carrier lifetime. This work paves the way of future on chip high-speed integrated circuits operating without optical isolators.

This study deals with the communication capabilities of two kinds of semiconductor lasers emitting in one of the atmosphere transparency windows, around 4 $\mu$ m. One of these two lasers is a quantum cascade laser and the other one is an interband cascade laser. With the quantum cascade laser, a subsequent attenuation is added to the optical path in order to mimic the attenuation of free-space transmission of several kilometers. Direct electrical modulation is used to transmit the message and two-level formats, non-return-to-zero and return-to-zero, are used and compared in terms of maximum transmission data rate. The sensitivity to optical feedback is also analyzed, as well as the evolution of the error rate when reducing the optical power at the level of the detector. This work provides a novel insight into the development of future secure free-space optical communication links based on mid-infrared semiconductor lasers and sheds the light on improvements required to achieve multi-Gbits/s communication with off-the-shelf components.

The onset of nonlinear dynamics and chaos is evidenced in a mid-infrared distributed feedback quantum cascade laser both in the temporal and frequency domains. As opposed to the commonly observed route to chaos in semiconductor lasers, which involves undamping of the laser relaxation oscillations, quantum cascade lasers first exhibit regular self-pulsation at the external cavity frequency before entering into a chaotic low-frequency fluctuation regime. The bifurcation sequence, similar to that already observed in class A gas lasers under optical feedback, results from the fast carrier relaxation dynamics occurring in quantum cascade lasers, as confirmed by numerical simulations. Such chaotic behavior can impact various practical applications including spectroscopy, which requires stable single-mode operation. It also allows the development of novel mid-infrared high-power chaotic light sources, thus enabling secure free-space high bit-rate optical communications based on chaos synchronization.

This work reports on the ultra-low linewidth enhancement factor (α_H-factor) of semiconductor quantum dot lasers epitaxially grown on silicon. Owing to the low density of threading dislocations and resultant high gain, an α_H value of 0.13 that is rather independent of the temperature range (288 K–308 K) is measured. Above the laser threshold, the linewidth enhancement factor does not increase extensively with the bias current which is very promising for the realization of future integrated circuits including high performance laser sources.

Chaos in nonlinear dynamical systems is featured with irregular appearance and with high sensitivity to initial conditions. Near-infrared light chaos based on semiconductor lasers has been extensively studied and has enabled various applications. Here, we report a fully-developed hyperchaos in the mid-infrared regime, which is produced from interband cascade lasers subject to the external optical feedback. Lyapunov spectrum analysis demonstrates that the chaos exhibits three positive Lyapunov exponents. Particularly, the chaotic signal covers a broad frequency range up to the GHz level, which is two to three orders of magnitude broader than existed mid-infrared chaos solutions. The interband cascade lasers produce either periodic oscillations or low-frequency fluctuations before bifurcating to hyperchaos. This hyperchaos source is valuable for developing long-reach secure optical communication links and remote chaotic Lidar systems, taking advantage of the high-transmission windows of the atmosphere in the mid-infrared regime.

Semiconductor nanostructures with low dimensionality like quantum dots and quantum dashes are one of the best attractive and heuristic solutions for achieving high performance photonic devices. When one or more spatial dimensions of the nanocrystal approach the de Broglie wavelength, nanoscale size effects create a spatial quantization of carriers leading to a complete discretization of energy levels along with additional quantum phenomena like entangled-photon generation or squeezed states of light among others. This article reviews our recent findings and prospects on nanostructure based light emitters where active region is made with quantum-dot and quantum-dash nanostructures. Many applications ranging from silicon-based integrated technologies to quantum information systems rely on the utilization of such laser sources. Here, we link the material and fundamental properties with the device physics. For this purpose, spectral linewidth, polarization anisotropy, optical nonlinearities as well as microwave, dynamic and nonlinear properties are closely examined. The paper focuses on photonic devices grown on native substrates (InP and GaAs) as well as those heterogeneously and epitaxially grown on silicon substrate. This research pipelines the most exciting recent innovation developed around light emitters using nanostructures as gain media and highlights the importance of nanotechnologies on industry and society especially for shaping the future information and communication society.