Technological platforms offering efficient integration of III-V semiconductor lasers with silicon electronics are eagerly awaited by industry. The availability of optoelectronic circuits combining III-V light sources with Si-based photonic and electronic components in a single chip will enable, in particular, the development of ultra-compact spectroscopic systems for mass scale applications. The first circuits of such type were fabricated using heterogeneous integration of semiconductor lasers by bonding the III-V chips onto silicon substrates. Direct epitaxial growth of interband III-V laser diodes on silicon substrates has also been reported, whereas intersubband emitters grown on Si have not yet been demonstrated. We report the first quantum cascade lasers (QCLs) directly grown on a silicon substrate. These InAs/AlSb QCLs grown on Si exhibit high performances, comparable with those of the devices fabricated on their native InAs substrate. The lasers emit near 11 µm, the longest emission wavelength of any laser integrated on Si. Given the wavelength range reachable with InAs/AlSb QCLs, these results open the way to the development of a wide variety of integrated sensors.

This study deals with the communication capabilities of two kinds of semiconductor lasers emitting in one of the atmosphere transparency windows, around 4 $\mu$ m. One of these two lasers is a quantum cascade laser and the other one is an interband cascade laser. With the quantum cascade laser, a subsequent attenuation is added to the optical path in order to mimic the attenuation of free-space transmission of several kilometers. Direct electrical modulation is used to transmit the message and two-level formats, non-return-to-zero and return-to-zero, are used and compared in terms of maximum transmission data rate. The sensitivity to optical feedback is also analyzed, as well as the evolution of the error rate when reducing the optical power at the level of the detector. This work provides a novel insight into the development of future secure free-space optical communication links based on mid-infrared semiconductor lasers and sheds the light on improvements required to achieve multi-Gbits/s communication with off-the-shelf components.

The precise detection of volatile organic compounds plays a pivotal role in addressing environmental concerns, industrial safety, and medical diagnostics. The accurate identification and quantification of these compounds because of their ubiquity and potential health hazards has fueled the development of advanced sensing technologies. This work presents a sensing system in the realm of long-wavelength infrared spectroscopy for achieving enhanced selectivity and sensitivity of benzene, toluene, and propane detection through quartz-enhanced photoacoustic spectroscopy. High-resolution gas spectroscopy is made possible by the use of specially designed InAs/AlSb-based quantum cascade lasers, emitting in the wavelength range 13–15 μm, and quartz tuning forks. The sensor system, characterized by its robustness and precision, demonstrates exceptional capabilities in benzene, toluene, and propane detection. The system's capacity for practical applications in environmental monitoring and medical diagnostics is demonstrated by its ability to distinguish these volatile organic compounds with a minimum detection limit of 113 ppb, 3 ppb, and 3 ppm for toluene, benzene, and propane at an integration time of 10 s, even in complex gas matrices. This work advances gas sensing technology while also offering insightful information on spectral interferences, a persistent problem in the field. The results usher in a new era of sophisticated and reliable gas sensing techniques meeting the growing demand for precise volatile organic compounds detectors for environmental monitoring purposes.

Space-to-ground high-speed transmission is of utmost importance for the development of a worldwide broadband network. Mid-infrared wavelengths offer numerous advantages for building such a system, spanning from low atmospheric attenuation to eye-safe operation and resistance to inclement weather conditions. We demonstrate a full interband cascade system for high-speed transmission around a wavelength of 4.18 µm. The low-power consumption of both the laser and the detector in combination with a large modulation bandwidth and sufficient output power makes this technology ideal for a free-space optical communication application. Our proof-of-concept experiment employs a radio-frequency optimized Fabry–Perot interband cascade laser and an interband cascade infrared photodetector based on a type-II InAs/GaSb superlattice. The bandwidth of the system is evaluated to be around 1.5 GHz. It allows us to achieve data rates of 12 Gbit/s with an on–off keying scheme and 14 Gbit/s with a 4-level pulse amplitude modulation scheme. The quality of the transmission is enhanced by conventional pre- and post-processing in order to be compatible with standard error-code correction.

Quantum cascade lasers emitting below 3μm are demonstrated. The lasers based on the InAs∕AlSb material system emit at 2.95–2.97μm in pulsed mode with threshold current densities near 3kA∕cm2 at 84K and operate up to room temperature. No degradation has been observed in laser performances compared with InAs∕AlSb quantum cascade lasers emitting at 3.14–3.35μm. The obtained results show no influence of the L valley in InAs on operation of these short wavelength quantum cascade lasers.

Multiple quantum well InAs/GaSb laser heterostructures with type III (type II broken gap) band alignment in the active region have been grown by molecular beam epitaxy. Intense electroluminescence was observed at room temperature (RT) with peak emission wavelengths in the range 1.95–3.4 μm. RT lasing has been achieved at 1.98 and 2.32 μm for the structures with 6 and 12 Å thick InAs quantum wells, respectively.