Since black silicon was discovered by coincidence, the special material was explored for many amazing material characteristics in optical, surface topography, and so on. Because of the material property, black silicon is applied in many spheres of a photodetector, photovoltaic cell, photo-electrocatalysis, antibacterial surfaces, and sensors. With the development of fabrication technology, black silicon has expanded in more and more applications and has become a research hotspot. Herein, this review systematically summarizes the fabricating method of black silicon, including nanosecond or femtosecond laser irradiation, metal-assisted chemical etching (MACE), reactive ion etching (RIE), wet chemical etching, electrochemical method, and plasma immersion ion implantation (PIII) methods. In addition, this review focuses on the progress in multiple black silicon applications in the past 10 years. Finally, the prospect of black silicon fabricating and various applications are outlined.

In this work, a modified Bosch etching process is developed to create silicon nanowires. Au nanoparticles (NPs) formed by magnetron sputtering film deposition and thermal annealing were employed as the hard mask to achieve controllable density and high aspect ratios. Such silicon nanowire exhibits the excellent anti-reflection ability of a reflectance value of below 2% within a broad light wave range between 220 and 1100 nm. In addition, Au NPs-induced surface plasmons significantly enhance the near-unity anti-reflection characteristics, achieving a reflectance below 3% within the wavelength range of 220 to 2600 nm. Furthermore, the nanowire array exhibits super-hydrophobic behavior with a contact angle over ~165.6° without enforcing any hydrophobic chemical treatment. Such behavior yields in water droplets bouncing off the surface many times. These properties render this silicon nanowire attractive for applications such as photothermal, photocatalysis, supercapacitor, and microfluidics.