A metal–organic framework (MOF) is a highly porous material with abundant redox capacitive sites for intercalation/de-intercalation of charges and, hence, is considered promising for electrode materials in supercapacitors. In addition, dopants can introduce defects and alter the electronic structure of the MOF, which can affect its surface reactivity and electrochemical properties. Herein, we report a copper-doped iron-based MOF (Cu@Fe-MOF/NF) thin film obtained via a simple drop-cast route on a 3D-nickel foam (NF) substrate for the supercapacitor application. The as-deposited Cu@Fe-MOF/NF electrodes exhibit a unique micro-sized bipyramidal structure composited with nanoparticles, revealing a high specific capacitance of 420.54 F g⁻¹ at 3 A g⁻¹ which is twice compared to the nano-cuboidal Fe-MOF/NF (210 F g⁻¹). Furthermore, the asymmetric solid-state (ASSSC) supercapacitor device, derived from the assembly of Cu@Fe-MOF/NFǁrGO/NF electrodes, demonstrates superior performance in terms of energy density (44.20 Wh.kg⁻¹) and electrochemical charge–discharge cycling durability with 88% capacitance retention after 5000 cycles. This work, thus, demonstrates a high potentiality of the Cu@Fe-MOF/NF film electrodes in electrochemical energy-storing devices.

Organic nonvolatile memory devices have a vital role for the next generation of electrical memory units, due to their large scalability and low-cost fabrication techniques. Here, we show bipolar resistive switching based on an Ag/ZnO/P3HT-PCBM/ITO device in which P3HT-PCBM acts as an organic heterojunction with inorganic ZnO protective layer. The prepared memory device has consistent DC endurance (500 cycles), retention properties (10⁴ s), high ON/OFF ratio (10⁵), and environmental stability. The observation of bipolar resistive switching is attributed to creation and rupture of the Ag filament. In addition, our conductive bridge random access memory (CBRAM) device has adequate regulation of the current compliance leads to multilevel resistive switching of a high data density storage.

The diversity of brain functions depend on the release of neurotransmitters in chemical synapses. The back gated three terminal field effect transistors (FETs) are auspicious candidates for the emulation of biological functions to recognize the proficient neuromorphic computing systems. In order to encourage the hysteresis loops, we treated the bottom side of MoTe₂ flake with deep ultraviolet light in ambient conditions. Here, we modulate the short-term and long-term memory effects due to the trapping and de-trapping of electron events in few layers of a MoTe₂ transistor. However, MoTe₂ FETs are investigated to reveal the time constants of electron trapping/de-trapping while applying the gate-voltage pulses. Our devices exploit the hysteresis effect in the transfer curves of MoTe₂ FETs to explore the excitatory/inhibitory post-synaptic currents (EPSC/IPSC), long-term potentiation (LTP), long-term depression (LTD), spike timing/amplitude-dependent plasticity (STDP/SADP), and paired pulse facilitation (PPF). Further, the time constants for potentiation and depression is found to be 0.6 and 0.9 s, respectively which seems plausible for biological synapses. In addition, the change of synaptic weight in MoTe₂ conductance is found to be 41% at negative gate pulse and 38% for positive gate pulse, respectively. Our findings can provide an essential role in the advancement of smart neuromorphic electronics.