Resistive random access memory (RRAM) devices are receiving increasing extensive attention due to their enhanced properties such as fast operation speed, simple device structure, low power consumption, good scalability potential and so on, and are currently considered to be one of the next-generation alternatives to traditional memory. In this review, an overview of RRAM devices is demonstrated in terms of thin film materials investigation on electrode and function layer, switching mechanisms and artificial intelligence applications. Compared with the well-developed application of inorganic thin film materials (oxides, solid electrolyte and two-dimensional (2D) materials) in RRAM devices, organic thin film materials (biological and polymer materials) application is considered to be the candidate with significant potential. The performance of RRAM devices is closely related to the investigation of switching mechanisms in this review, including thermal-chemical mechanism (TCM), valance change mechanism (VCM) and electrochemical metallization (ECM). Finally, the bionic synaptic application of RRAM devices is under intensive consideration, its main characteristics such as potentiation/depression response, short-/long-term plasticity (STP/LTP), transition from short-term memory to long-term memory (STM to LTM) and spike-time-dependent plasticity (STDP) reveal the great potential of RRAM devices in the field of neuromorphic application.

We have measured the single-molecule conductance of 1,n-alkanedithiol molecular bridges (n = 4, 6, 8, 10, 12) on a graphene substrate using scanning tunneling microscopy (STM)-formed electrical junctions. The conductance values of this homologous series ranged from 2.3 nS (n = 12) to 53 nS (n = 4), with a decay constant β_n of 0.40 per methylene (−CH₂) group. This result is explained by a combination of density functional theory (DFT) and Keldysh–Green function calculations. The obtained decay, which is much lower than the one obtained for symmetric gold junctions, is related to the weak coupling at the molecule–graphene interface and the electronic structure of graphene. As a consequence, we show that using graphene nonsymmetric junctions and appropriate anchoring groups may lead to a much-lower decay constant and more-conductive molecular junctions at longer lengths.

A facile and environmentally friendly fabrication is proposed to prepare nitrogen-doped hierarchical porous activated carbon via normal-pressure popping, one-pot activation and nitrogen-doping process. The method adopts paddy as carbon precursor, KHCO₃ and dicyandiamide as the safe activating agent and nitrogen dopant. The as-prepared activated carbon presents a large specific surface area of 3025 m²·g⁻¹ resulting from the synergistic effect of KHCO₃ and dicyandiamide. As an electrode material, it shows a maximum specific capacitance of 417 F·g⁻¹ at a current density of 1 A·g⁻¹ and very good rate performance. Furthermore, the assembled symmetric supercapacitor presents a large specific capacitance of 314.6 F·g⁻¹ and a high energy density of 15.7 Wh·Kg⁻¹ at 1 A·g⁻¹, maintaining 14.4 Wh·Kg⁻¹ even at 20 A·g⁻¹ with the energy density retention of 91.7%. This research demonstrates that nitrogen-doped hierarchical porous activated carbon derived from paddy has a significant potential for developing a high-performance renewable supercapacitor and provides a new route for economical and large-scale production in supercapacitor application.

Resistive random access memory (RRAM), which is considered as one of the most promising next-generation non-volatile memory (NVM) devices and a representative of memristor technologies, demonstrated great potential in acting as an artificial synapse in the industry of neuromorphic systems and artificial intelligence (AI), due its advantages such as fast operation speed, low power consumption, and high device density. Graphene and related materials (GRMs), especially graphene oxide (GO), acting as active materials for RRAM devices, are considered as a promising alternative to other materials including metal oxides and perovskite materials. Herein, an overview of GRM-based RRAM devices is provided, with discussion about the properties of GRMs, main operation mechanisms for resistive switching (RS) behavior, figure of merit (FoM) summary, and prospect extension of GRM-based RRAM devices. With excellent physical and chemical advantages like intrinsic Young’s modulus (1.0 TPa), good tensile strength (130 GPa), excellent carrier mobility (2.0 × 10⁵ cm²∙V⁻¹∙s⁻¹), and high thermal (5000 Wm⁻¹∙K⁻¹) and superior electrical conductivity (1.0 × 10⁶ S∙m⁻¹), GRMs can act as electrodes and resistive switching media in RRAM devices. In addition, the GRM-based interface between electrode and dielectric can have an effect on atomic diffusion limitation in dielectric and surface effect suppression. Immense amounts of concrete research indicate that GRMs might play a significant role in promoting the large-scale commercialization possibility of RRAM devices.

Resistive random access memory (RRAM) devices with Ni/AlO_x/Pt-structure were manufactured by deposition of a solution-based aluminum oxide (AlO_x) dielectric layer which was subsequently annealed at temperatures from 200 °C to 300 °C, in increments of 25 °C. The devices displayed typical bipolar resistive switching characteristics. Investigations were carried out on the effect of different annealing temperatures for associated RRAM devices to show that performance was correlated with changes of hydroxyl group concentration in the AlO_x thin films. The annealing temperature of 250 °C was found to be optimal for the dielectric layer, exhibiting superior performance of the RRAM devices with the lowest operation voltage (10⁴), the narrowest resistance distribution, the longest retention time (>10⁴ s) and the most endurance cycles (>150).