Eu³⁺ doped porous nanostructured SrTiO₃ films and powder fabricated by sol-gel route without using any precursor template are characterized by different morphology and phase composition. The films and the power show red and yellow luminescence with the most intensive photoluminescence (PL) bands at 612 nm and 588 nm, respectively. Raman, secondary ion mass spectrometry (SIMS), and X-ray diffraction (XRD) analysis of undoped nanostructured porous SrTiO₃ films showed the presence of TiO₂, SrO, and SrTiO₃ phases and their components. The undoped porous SrTiO₃ films are photosensitive and demonstrate resistive switching. The capacitance-voltage hysteresis loops with the width of about 6 V in the frequency range of 2 kHz—2 MHz were observed.

The results of studying a HIT (heterojunction with an intrinsic thin layer) Ag/ITO/ a-Si:H( p)/ a-Si:H( i)/ c-Si( n)/ a-Si:H( i)/ a-Si:H( n+)/ITO/Ag solar cell by the capacitance–voltage...

The non-Arrhenius behaviour of Ge ₂ Sb ₂ Te ₅ conductivity is attributed to the non-linear temperature dependence of the Fermi level, assuming extended state conduction by free holes. The temperature-dependent Fermi level is shown to alter values of activation energy and prefactor for conductivity so that their exact determination becomes impossible using the conductivity data alone. However, if one assumes the temperature dependence of the Fermi level to be a parabolic function. Then, two of three model parameters can be retrieved; to obtain the third parameter one has to make an assumption about the value of prefactor for conductivity. Applying the proposed analysis scheme to Ge ₂ Sb ₂ Te ₅ , reasonable values of Fermi level position are obtained and the change of Fermi level as a result of resistance drift phenomenon is demonstrated.

A measuring system for current deep-level transient spectroscopy of semiconductor diode structures is described. Its distinguishing feature is the ability to measure several relaxation currents (up...