In this paper, undoped, Al-, and In-doped zinc oxide thin films were deposited. Film growth was performed using the sol–gel technique. The method included (a) preparing homogeneous and stable solutions of zinc acetate 2-hydrate, (b) mixing them with aluminum nitrate and indium acetate in 2-methoxyethanol and 2-aminoethanol solutions with various concentrations, and (c) spin coating them onto transparent glass substrates. After thermal annealing, the films showed a high transparency (80–90%) and good stability. Using typical diagnostic tools, the structural, morphological, optical, and electrical film properties were investigated and linked to the dopant type, and concentrations in view of optoelectronics were investigated.

The theoretical calculations on structural, half-metallic and elastic properties of FeZrX (X = P, As, Sb and Bi) half-Heusler compounds were investigated using WIEN2k code. In all compounds, the ferromagnetic (FM) phases in Type II structure are more stable energetically than non-magnetic (NM) phases. The spin-up electrons of all half-Heusler compounds have semiconducting nature with energy gaps while spin-down electrons have metallic behavior. FeZrM (M = III, IV and VI A group elements) compounds have also been investigated, but these compounds have metallic properties, whereas FeZrP, FeZrAs, FeZrSb and FeZrBi compounds have half-metal nature. According to calculated Cij elastic constants, FeZrX (X = P, As, Sb and Bi) half-Heusler compounds are elastically stable and these compounds are ductile materials. Finally, FeZrX (X = P, As, Sb and Bi) half-Heusler compounds were obtained true half-metal ferromagnetic materials (HMF) within 1.00 µB/f.u.