Hongyi Xu received the B.S. degree in school of microelectronics and solid-state electronics from University of Electronic Science and Technology of China, China, in 2014 and the Ph.D. degree in college of electrical engineering from Zhejiang University, China, in 2021. He is currently working as a postdoctoral researcher at ZJU-Hangzhou Global Scientific and Technological Innovation Center. His current research interests include design, modeling, fabrication and reliability study of SiC diodes, MOSFETs.