Spectral photoconductivity, photoconductive quenching, photoluminescence, and thermally stimulated current measurements, have been carried out in order to study the evolution of defect energy levels in CdS thin films, grown in cubic phase by chemical bath deposition, as a function of thermal annealing temperatures in Ar+S2 atmosphere. The results are influenced by a cubic-to-hexagonal phase transition. From those measurements, a number of trap levels and deep levels in the forbidden band are determined. The results can be explained in terms of the evolution of native and phase transition generated defects in the sample structure.

As the use of photovoltaic installations becomes extensive, it is necessary to look for recycling processes that mitigate the environmental impact of damaged or end-of-life photovoltaic panels. There is no single path for recycling silicon panels, some works focus on recovering the reusable silicon wafers, others recover the silicon and metals contained in the panel. In the last few years, silicon solar cells are thinner, and it becomes more difficult to separate them from the glass, so the trend is towards the recovery of silicon. In this paper, we investigate the experimental conditions to delaminate and recovery silicon in the recycling process, using a combination of mechanical, thermal, and chemical methods. The conditions of thermal treatment to remove the ethylene-vinyl acetate (EVA) layer were optimized to 30 min at 650 °C in the furnace. To separate silicon and metals, the composition of HF/HNO₃ solution and the immersion time were adjusted considering environmental aspects and cost. Under the selected conditions, panels from different manufacturers were tested, obtaining similar yields of recovered silicon but differences in the metal concentrations.

From photoacoustic (PA) experiments we determine the nonradiative carrier lifetime in direct band-gap semiconductors. We use the Rosencwaig and Gerscho model to calculate the PA signal in semiconductors taking into account the distinction between non-radiative and radiative carrier lifetimes. We have assumed that for our high quality crystalline samples, the main contribution to the non-radiative processes comes from CHCC and CHSH Auger recombination for n and p-type materials, respectively. For GaAs, InSb and GaSb samples, the experimental data obtained by means of an open photoacoustic cell were fitted to the theoretical model and we show that the values we determined for the non-radiative recombination lifetime agree well with those reported in the literature.