In this study, adding CsPbI₃ quantum dots to organic perovskite methylamine lead triiodide (CH₃NH₃PbI₃) to form a doped perovskite film filmed by different temperatures was found to effectively reduce the formation of unsaturated metal Pb. Doping a small amount of CsPbI₃ quantum dots could enhance thermal stability and improve surface defects. The electron mobility of the doped film was 2.5 times higher than the pristine film. This was a major breakthrough for inorganic quantum dot doped organic perovskite thin films.

In this study, a simple hot-injection method to synthesize high-quality inorganic perovskite cesium lead iodide (CsPbI₃) quantum-dots (QDs) was demonstrated. Adding CsPbI₃ QDs into the organic perovskite methylamine lead triiodide (CH₃NH₃PbI₃) to form a composite perovskite film, annealed by different temperatures, was found to be effectively enhanced by the perovskite crystallization. The intensity of the preferred peak (110) of MAPbI₃ was enhanced by increasing the size of the crystal and reducing the cluster crystal. The densest film can be found at annealing temperature of 140 °C. The full width half maximum of MAPbI₃ and CsPbI₃ was analyzed through XRD peak fitting. This was a huge breakthrough for QDs doped perovskite films.