In recent years, the study of organic–inorganic halide perovskite as an optoelectronics material has been a significant line of research, and the power conversion efficiency of solar cells based on these materials has reached 25.5%. However, defects on the surface of the film are still a problem to be solved, and oxygen plasma is one of the ways to passivate surface defects. In order to avoid destroying the methylammonium lead iodide (MAPbI₃), the influence of plasma powers on film was investigated and the cesium triiodide (CsPbI₃) quantum dots (QDs) were doped into the film. In addition, it was found that oxygen plasma can enhance the mobility and carrier concentration of the MAPbI₃ film.

In this study, we describe composited perovskite films based on the doping of lead cesium triiodide (CsPbI₃) quantum dots (QDs) into methylammonium lead iodide (MAPbI₃). CsPbI₃ QDs and MAPbI₃ were prepared by ligand-assisted re-precipitation and solution mixing, respectively. These films were optimized by oxygen plasma treatment, and the effect of powers from 0 to 80 W on the structural properties of the composited perovskite films is discussed. The experimental results showed that the light-harvesting ability of the films was enhanced at 20 W. The formation of the metastable state (lead(II) oxide and lead tetroxide) was demonstrated by peak differentiation-imitating. A low power enhanced the quality of the films due to the removal of organic impurities, whereas a high power caused surface damage in the films owing to the severe degradation of MAPbI₃.