This paper describes the heteroepitaxial growth of high-quality alpha-phase gallium oxide (α-Ga2O3) on a sapphire substrate without a buffer layer via the hydride vapor phase epitaxy method. Here, compressive strain arising from the difference in lattice constants between the substrate and α-Ga2O3 is relieved near the interface, resulting in a high crystal quality of 32.72 arcsec (full width at half maximum value) in the high-resolution x-ray diffraction 2θ scan spectrum. Subsequently, the fabricated hetero α-Ga2O3-based photodetector with a metal–semiconductor–metal structure operating under ultraviolet radiation in the C-band (UVC) demonstrates a high UVC responsivity of 5 × 102 A W−1 and a high visible blindness of 8.14 × 104 at 235 nm. The photodetector utilizes photogenerated holes trapped near the interface of the metal electrode, inducing amplified electron current flow. The developed hetero α-Ga2O3-based UVC photodetector can be used to detect early signs of fire, flames, or corona discharge in visible light environments for social and industrial safety applications.

The electrical and optoelectronic performance of semiconductor devices are mainly affected by the presence of defects or crystal imperfections in the semiconductor. Oxygen vacancies are one of the most common defects and are known to serve as electron trap sites whose energy levels are below the conduction band (CB) edge for metal oxide semiconductors, including β-Ga₂O₃. In this study, the effects of plasma nitridation (PN) on polycrystalline β-Ga₂O₃ thin films are discussed. In detail, the electrical and optical properties of polycrystalline β-Ga₂O₃ thin films are compared at different PN treatment times. The results show that PN treatment on polycrystalline β-Ga₂O₃ thin films effectively diminish the electron trap sites. This PN treatment technology could improve the device performance of both electronics and optoelectronics.

A fast-response colorimetric ultraviolet-C (UVC) sensor was demonstrated using a gallium oxide (Ga₂O₃) photocatalyst with small amounts of triethanolamine (TEOA) in methylene blue (MB) solutions and a conventional RGB photodetector. The color of the MB solution changed upon UVC exposure, which was observed using an in situ RGB photodetector. Thereby, the UVC exposure was numerically quantified as an MB reduction rate with the R value of the photodetector, which was linearly correlated with the measured spectral absorbance using a UV-Vis spectrophotometer. Small amount of TEOA in the MB solution served as a hole scavenger, which resulted in fast MB color changes due to the enhanced charge separation. However, excessive TEOA over 5 wt.% started to block the catalytical active site on the surface of Ga₂O₃, prohibiting the chemical reaction between the MB molecules and catalytic sites. The proposed colorimetric UVC sensor could monitor the detrimental UVC radiation with high responsivity at a low cost.

In this study, the influence of HfO₂ interlayer thickness on the performance of heteroepitaxial α-Ga₂O₃ layer-based metal–insulator–semiconductor–insulator–metal (MISIM) ultraviolet photodetectors is examined. A thin HfO₂ interlayer enhances the interface quality and reduces the density of interface traps, thereby improving the performance of UVC photodetectors. The fabricated device with a 1 nm HfO₂ interlayer exhibited a significantly reduced dark current and higher photocurrent than a conventional metal–semiconductor–metal (MSM). Specifically, the 1 nm HfO₂ MISIM device demonstrated a photocurrent of 2.3 μA and a dark current of 6.61 pA at 20 V, whereas the MSM device exhibited a photocurrent of 1.1 μA and a dark current of 73.3 pA. Furthermore, the photodetector performance was comprehensively evaluated in terms of responsivity, response speed, and high-temperature operation. These results suggest that the proposed ultra-thin HfO₂ interlayer is an effective strategy for enhancing the performance of α-Ga₂O₃-based UVC photodetectors by simultaneously suppressing dark currents and increasing photocurrents and ultimately demonstrate its potential for stable operation under extreme environmental conditions.

In this study, we investigate the optical and structural properties of Cu-doped β-Ga₂O₃ nanostructures synthesized via a hydrothermal method, followed by annealing in ambient O₂. Different Cu doping concentrations (0, 1.6, and 4.8 at.%) are introduced to examine their effects on the crystal structure, chemical state, and optical bandgap of β-Ga₂O₃. X-ray diffraction (XRD) analysis reveals that the host β-Ga₂O₃ crystal structure is preserved at lower doping levels, whereas secondary phases (Ga₂CuO₄) appear at higher doping concentrations (4.8 at.%). X-ray photoelectron spectroscopy (XPS) confirms the presence of Cu²⁺ ions in both lattice substitution sites and surface-adsorbed hydroxylated species (Cu(OH)₂). The optical bandgap of β-Ga₂O₃ is found to decrease with increasing Cu concentration, likely due to the formation of localized states or secondary phases. These findings demonstrate the tunability of the optical properties of β-Ga₂O₃ via Cu doping, providing insights into the incorporation mechanisms and their impact on structural and electronic properties.