The nitrogenated holey two-dimensional carbon nitride (${\mathrm{C}}_2\mathrm{N}$) has been efficaciously utilized in the fabrication of transistors, sensors, and batteries in recent years, but lacks application in the photovoltaic industry. The ${\mathrm{C}}_2\mathrm{N}$ possesses favorable optoelectronic properties. To investigate its potential feasibility for solar cells (as either an absorber layer/interface layer), we foremost detailed the numerical modeling of the double-absorber-layer–methyl ammonium lead iodide (${\mathrm{CH}}_3{\mathrm{NH}}_3{\mathrm{PbI}}_3$) –carbon nitride (${\mathrm{C}}_2\mathrm{N}$) layer solar cell and subsequently provided in-depth insight into the active-layer-associated recombination losses limiting the efficiency ($\mathsf{\eta }$) of the solar cell. Under the recombination kinetics phenomena, we explored the influence of radiative recombination, Auger recombination, Shockley Read Hall recombination, the energy distribution of defects, Band Tail recombination (Hoping Model), Gaussian distribution, and metastable defect states, including single-donor (0/+), single-acceptor (−/0), double-donor (0/+/2+), double-acceptor (2/−/0−), and the interface-layer defects on the output characteristics of the solar cell. Setting the defect (or trap) density to ${10}^{15}{\mathrm{cm}}^{-3}$ with a uniform energy distribution of defects for all layers, we achieved an$\mathsf{\eta }$ of 24.16%. A considerable enhancement in power-conversion efficiency ($\mathsf{\eta }~27\%$) was perceived as we reduced the trap density to ${10}^{14}{\mathrm{cm}}^{-3}$ for the absorber layers. Furthermore, it was observed that, for the absorber layer with double-donor defect states, the active layer should be carefully synthesized to reduce crystal-order defects to keep the total defect density as low as ${10}^{17}{\mathrm{cm}}^{-3}$ to achieve efficient device characteristics.

Automation and modernization of the grid with the availability of micro-grids including non-conventional sources of energy are the main constituent of smart grid technology. Most energy demand is fulfilled by fossil fuel-based power plants. Inadequacy of fuel resources, higher operating costs, and ever-increasing carbon emissions are the primary constraints of fossil fuels-operated power plants. Sustainable energy resource utilization in meeting energy demand is thought to be a preferred solution for reducing carbon emissions and is also a sustainable economic solution. This research effort discusses an accurate mathematical modeling and simulation implementation of a sustainable energy resource model powered by solar, grid, and proton exchange membrane fuel cell (PEMFC) stack and focuses on the energy management of the model. In the proposed model, despite energy resources being sustainable, consumer side sustainability is achieved by using electrical charging vehicles (ECVs) to be integrated with sustainable resources. The proposed energy resource management (ERM) strategy is evaluated by simulating different operating conditions with and without distributed energy resources exhibiting the effectiveness of the proposed model. PEMFC is incorporated in the model to control fluctuations that have been synchronized with other energy resources for the distribution feeder line. In this proposed model, PEMFC is synchronized with grid and solar energy sources for both DC and AC load with ERM of all sources, making the system effective and reliable for consumer-based load and ECVs utilization.

Herein, we numerically elucidate the effect of varying surface recombination velocity ($S_r{}_v$) at the front and back metal contact on the device performance for our reported lead-free formamidinium tin triiodide (${\mathrm{FASnI}}_3$) perovskite solar cell. The $S_r{}_v$ is generally contemplated as a trivial non-radiative recombination loss factor but determinately impacts the characteristics of the solar cell. Given that, we simultaneously varied the $S_r{}_v$ at the back and front metal contacts in the range of $1\times {10}^1–1\times {10}^7\mathrm{cm}/\mathrm{s}$. Such values for $S_r{}_v$ can be realized by ideally passivating the perovskite film and with passivated perovskite films or metallic contact resistive nature. It was inferred that at $S_r{}_v$ of $1\times {10}^7\mathrm{cm}/\mathrm{s}$, the device efficiency was 21.24% and was steeply increased to 21.42% after decreasing the $S_r{}_v$ rate to $1\times {10}^1\mathrm{cm}/\mathrm{s}$, revealing that recombination losses are enhanced at a higher $S_r{}_v$ rate because of increased carrier recombination at the defect surface, thereby reducing the efficiency and overall performance of the solar cell.

Copper indium gallium selenide (CIGS) is an inexpensive material that has the potential to dominate the next-generation photovoltaic (PV) industry. Here we detail computational investigation of CIGS solar cell with encouragement of adopting cuprous dioxide (Cu₂O) as a Hole Transport Layer (HTL) for efficient fabricated CIGS solar cells. Although Cu₂O as a HTL has been studied earlier for perovskite and other organic/inorganic solar cell yet no study has been detailed on potential application of Cu₂O for CIGS solar cells. With the proposed architecture, recombination losses are fairly reduced at the back contact and contribute to enhanced photo-current generation. With the introduction of Cu₂O, the overall cell efficiency is increased to 26.63%. The wide-band of Cu₂O pulls holes from the CIGS absorber which allows smoother extraction of holes with experiencing lesser resistance. Further, it was also inferred that, HTL also improves the quantum efficiency (QE) for photons with large wavelengths thus increases the cell operating spectrum.

Herein we foremost detailed the numerical modeling of the double absorber layer- methyl ammonium lead iodide– carbon nitride layer solar cell and subsequently provided in-depth insight on the active layer associated with dominant radiative and non-radiative recombination losses limiting the efficiency ( ) of the solar cell. Under recombination kinetics phenomena, we explored the influence of Radiative recombination, Auger recombination, Shockley Read Hall recombination, the energy distribution of defects; Band Tail recombination (Hoping Model), Gaussian distribution, metastable defect states including single donor (0/+), single acceptor (-/0), Double Donor (0/+/2+), double acceptor (2/-/0-), and the interface layer defects on the output characteristics of the solar cell. Setting defect (or trap) density to with uniform energy distribution of defects for all the layers, we achieved the of 24. 16 %. A considerable enhancement in power conversion efficiency was perceived as we reduced the trap density to for the absorber layers. Further, it was observed that for the absorber layer with double donor defect states, the active layer should be carefully synthesized to reduce crystal order defects to keep the total defect density as low as to achieve efficient device characteristics