Extensive literature and publications on intermediate band solar cells (IBSCs) are reviewed. A detailed discussion is given on the thermodynamics of solar energy conversion in IBSCs, the device physics, and the carrier dynamics processes with a particular emphasis on the two-step inter-subband absorption/recombination processes that are of paramount importance in a successful implementation high-efficiency IBSC. The experimental solar cell performance is further discussed, which has been recently demonstrated by using highly mismatched alloys and high-density quantum dot arrays and superlattice. IBSCs having widely different structures, materials, and spectral responses are also covered, as is the optimization of device parameters to achieve maximum performance.

We have fabricated and compared the performance of GaAs-based p-i-n quantum dot solar cells with ten multilayer stacked structures of self-assembled InAs quantum dots embedded with GaNxAs1−x strain-compensating spacer layers. Reducing the thickness of the spacer layer, and hence increasing the nitrogen composition in GaNxAs1−x, from 40 nm (x=0.5%) to 15 nm (x=1.5%) thereby fulfilling the net strain-balanced condition, resulted in a steady increase in the short-circuit density, while a decreasing trend for the open-circuit voltage was observed. The observed results can be interpreted in terms of the difference in the quantum confinement structure.

For decades, progress in the field of optical (including solar) energy conversion was dominated by advances in the conventional concentrating optics and materials design. In recent years, however, conceptual and technological breakthroughs in the fields of nanophotonics and plasmonics combined with a better understanding of the thermodynamics of the photon energy-conversion processes reshaped the landscape of energy-conversion schemes and devices. Nanostructured devices and materials that make use of size quantization effects to manipulate photon density of states offer a way to overcome the conventional light absorption limits. Novel optical spectrum splitting and photon-recycling schemes reduce the entropy production in the optical energy-conversion platforms and boost their efficiencies. Optical design concepts are rapidly expanding into the infrared energy band, offering new approaches to harvest waste heat, to reduce the thermal emission losses, and to achieve noncontact radiative cooling of solar cells as well as of optical and electronic circuitries. Light–matter interaction enabled by nanophotonics and plasmonics underlie the performance of the third- and fourth-generation energy-conversion devices, including up- and down-conversion of photon energy, near-field radiative energy transfer, and hot electron generation and harvesting. Finally, the increased market penetration of alternative solar energy-conversion technologies amplifies the role of cost-driven and environmental considerations. This roadmap on optical energy conversion provides a snapshot of the state of the art in optical energy conversion, remaining challenges, and most promising approaches to address these challenges. Leading experts authored 19 focused short sections of the roadmap where they share their vision on a specific aspect of this burgeoning research field. The roadmap opens up with a tutorial section, which introduces major concepts and terminology. It is our hope that the roadmap will serve as an important resource for the scientific community, new generations of researchers, funding agencies, industry experts, and investors.

We report for the first time a successful fabrication and operation of an InAs/GaAs quantum dot based intermediate band solar cell concentrator photovoltaic (QD-IBSC-CPV) module to the IEC62108 standard with recorded power conversion efficiency of 15.3%. Combining the measured experimental results at Underwriters Laboratory (UL®) licensed testing laboratory with theoretical simulations, we confirmed that the operational characteristics of the QD-IBSC-CPV module are a consequence of the carrier dynamics via the intermediate-band at room temperature.

The intermediate-band solar cell (IBSC) with quantum dots and a bulk semiconductor matrix has potential for high power conversion efficiency, exceeding the Shockley-Queisser limit. However, the IBSCs reported to date have been fabricated only by dry process and their efficiencies are limited, because their photo-absorption layers have low particle density of quantum dots, defects due to lattice strain, and low bandgap energy of bulk semiconductors. Here we present solution-processed IBSCs containing photo-absorption layers where lead sulfide quantum dots are densely dispersed in methylammonium lead bromide perovskite matrices with a high bandgap energy of 2.3 eV under undistorted conditions. We confirm that the present IBSCs exhibit two-step photon absorption via intermediate-band at room temperature by inter-subband photocurrent spectroscopy.