This paper reports on carbon and tungsten deposition on a heated silicon substrate under He⁺ bombardment in a magnetron-sputtering device. The discharge was operated at constant pressure of 1.33 Pa for two discharge-current intensities (200 and 600 mA) and target power density up to 40 Wmiddotcm^-2. The deposited films were characterized by scanning electron microscopy, atomic force microscopy, and X-ray diffractometry. The topography and cross section revealed the influence of the target power density on the surface roughness, grains' size, and thickness of the deposited films.