A model is developed for the elastic stress relaxation via formation of prismatic dislocation loops in a vicinity of the As–Sb nanoclusters built in GaAs matrix. The model is based on the experimental investigation of the microstructure of the As–Sb nanoclusters, which can be produced in Sb-doped GaAs films by the molecular-beam epitaxy at low temperature and subsequent anneal. A strong anisotropic mismatch between the As–Sb nanoclusters and GaAs matrix has been revealed by transmission electron microscopy. This mismatch was proven to be a reason for the formation of nanoscale dislocation loops near the nanoclusters. Our theoretical model explores the elastic properties of an inclusion with uniaxial dilatation. For such inclusions, the elastic stresses and stored energy are determined in a closed analytical form. The theoretical analysis predicts a specific nonlinear dependence of the dislocation loop diameter on the cluster diameter, which fits well the experimentally observed one. It is demonstrated that both the change in the inclusion self-energy due to diminishing dilatation and the interaction between the dislocation loop and inclusion are important in the relaxation phenomena in precipitated semiconductors.

Non-truncated pyramidal In(Ga)As quantum dots (QDs) embedded in GaAs were obtained by a combination of low temperature/high rate GaAs covering of InAs QDs. We use advanced transmission electron microscopy to study the composition and mechanics of the objects. Results from the core region of a sliced QD, and from an entire object, are consistent and complementary allowing the development of accurate models describing the 3D shape, chemical distribution, elastic strains and stresses in the QD, wetting layer, and matrix. The measured structure develops an extremely compressive apex, reaching a vertical stress of −8 GPa and horizontal stress of −6.2 GPa.

We demonstrate optical Bragg lattices formed by quasi-two-dimensional excitons in periodic systems of the InGaN quantum wells separated by the GaN barriers. When the Bragg resonance and exciton-polariton resonance are tuned to each-other, the medium exhibits an exciton-mediated resonantly enhanced optical Bragg reflection. The enhancement factor appeared to be larger than 2 for the system of 60 quantum wells. Owing to a high binding energy and oscillator strength of the excitons in InGaN quantum wells, the resonant enhancement was achieved at room temperature.

A periodic multiple quantum well GaAs/AlGaAs structure was designed, grown, and characterized in order to reveal resonant features in optical spectra when the Bragg resonance was tuned to the second quantum state x(e2-hh2) of the heavy-hole exciton-polaritons in the multiple quantum wells. This double resonance was demonstrated by tuning the incident angle of the light as well as by comparison with a single quantum well structure. A significant enhancement of the light-matter interaction was observed, which manifests itself by strong resonant optical reflection and electroreflection.

Microstructure of GaAs films grown by molecular-beam epitaxy at low temperature and delta doped with Sb was studied by transmission electron microscopy. The material contained 0.5 at. % excess of arsenic that precipitated during post growth anneals. The Sb δ doping was found to strongly affect the microstructure of precipitates (clusters) and their ripening rate upon annealing. Segregation of Sb impurity in the clusters was revealed. In contrast to the well known pure As clusters, the As–Sb clusters induced strong local deformations in the surrounding GaAs matrix. Until a threshold diameter of 7–8 nm the clusters and surrounding matrix were coherently strained. Larger clusters were associated with dislocation loops of interstitial type. The cluster-loop orientation relationships were determined. Relaxation of local strains by formation of the dislocation loops was studied both experimentally and theoretically.