This paper presents a 2.5 Gbps 10-lane low-power low voltage differential signaling (LVDS) transceiver for a high-speed serial interface. In the transmitter, a complementary MOS H-bridge output driver with a common mode feedback (CMFB) circuit was used to achieve a stipulated common mode voltage over process, voltage and temperature (PVT) variations. The receiver was composed of a pre-stage common mode voltage shifter and a rail-to-rail comparator. The common mode voltage shifter with an error amplifier shifted the common mode voltage of the input signal to the required range, thereby the following rail-to-rail comparator obtained the maximum transconductance to recover the signal. The chip was fabricated using SMIC 28 nm CMOS technology, and had an area of 1.46 mm². The measured results showed that the output swing of the transmitter was around 350 mV, with a root-mean-square (RMS) jitter of 3.65 ps@2.5 Gbps, and the power consumption of each lane was 16.51 mW under a 1.8 V power supply.

This paper proposes a hybrid dual path sub-sampling phase-locked loop (SSPLL), including a proportional path (P-path) and an integral path (I-path), with 0.8 V supply voltage. A differential master–slave sampling filter (MSSF), replacing the sub-sampling charge pump (SSCP), composed the P-path to avoid the degraded feature caused by the decreasing of the supply voltage. The I-path is built by a rail-to-rail SSCP to suppress the phase noise of the voltage-controlled oscillator (VCO) and avoid the trouble of locking at the non-zero phase offset (as in type-I PLL). The proposed design is implemented in a 40-nm CMOS process. The measured output frequency range is from 5.3 to 5.9 GHz with 196.5 fs root mean square (RMS) integrated jitter and $-251.6$ dB FoM.

This article presents a low power digital controlled oscillator (DCO) with an ultra low power duty cycle correction (DCC) scheme. The DCO with the complementary cross-coupled topology uses the controllable tail resistor to improve the tail current efficiency. A robust duty cycle correction (DCC) scheme is introduced to replace self-biased inverters to save power further. The proposed DCO is implemented in a Semiconductor Manufacturing International Corporation (SMIC) 40 nm CMOS process. The measured phase noise at room temperature is −115 dBc/Hz at 1 MHz offset with a dissipation of 210 μ$\mathsf{\mu }$W at an oscillating frequency of 2.12 GHz, and the resulin figure-of-merit is s −189 dBc/Hz.