Supply chain network design problem is increasingly showing its importance, especially the perishable supply chain. This research develops a multi-objective mathematical model to design four-echelon intermodal multi-product perishable supply chain configuration in order to ensure a balance of the three pillars of sustainable development: economy, environment, and society. The optimization objective functions of the model are, respectively, minimizing costs, delivery time, emissions, and the supply-demand mismatch in time. The model addresses particular problems in the supply chain of fresh fruits, which is more challenging compared to other types of perishable products due to its seasonal characteristics. The study proposes a new approach that combines and standardizes the above objective functions into a single weighted objective function. The solution from the model supports the decision-making process at both strategic and tactical levels. Strategically, the model supports decisions about the location, size of facilities, product flows, and workforce level. Tactically, the decision variables provide information on harvest time, delivery time, the delivery route, and mode of transport. To demonstrate its practical applicability, the model is applied to Mekong Delta region, Vietnam, where a variety of fruit types, large yields, and high distribution demand in this region make designing a shared supply chain desirable for its overall economic, environmental, and social concerns. Moreover, sensitivity analysis regarding weights of different objectives is performed to assess possible changes in supply chain configurations. Application of this model to other perishable products, the addition of modes of transport, social policy, and uncertainty parameters may be suggested for future research.

$\mathrm{In}{\mathrm{Sb}}_{1-x}{\mathrm{N}}_x$ was grown by radio frequency plasma-assisted molecular beam epitaxy. The effect of nitrogen plasma power $(200–500\mathrm{W})$ and growth temperature $(330–420°\mathrm{C})$ on nitrogen incorporation was investigated. A combined analysis involving x-ray diffraction, x-ray photoelectron spectroscopy, and secondary ion mass spectroscopy measurements indicates that the dominant nitrogen defect is interstitial N–Sb. Increasing the plasma power resulted in increase in the interstitial N–Sb amount rather than the substitutional ${\mathrm{N}}_{\mathrm{Sb}}$ amount. For fixed plasma power, decreasing the growth temperature helped reduce the interstitial N–Sb defect. Under the experimental conditions, the average value of substitutional N is approximately 1.6%–2%.

We study the annealing effects on the properties of as-grown InSbN films. The annihilation of donor defects in the form of N-N interstitials is suggested by the shifting of N induced tensile strain and a decrease in free electron concentration from $\sim 1\times {10}^{18}$ to device level of $\sim 2\times {10}^{16}{\text{cm}}^{-3}$ . These findings support the argument that N interstitials thermally dissociate into single N. Corresponding signatures for the reduced Sb antisites and N-N interstitial defects are apparent in Raman spectra. This work will benefit those working on long wavelength infrared photodetectors.

InSb 1 − x N x alloys on GaAs substrates are prepared by molecular beam epitaxy and in situ thermal annealed at different temperatures in Sb ambience. X-ray diffraction indicates that the amount of N incorporation in Sb lattice sites is dependent on the annealing temperature. Low annealing temperature increases the N incorporation and extends the absorption to long wavelength infrared range. InSb1−xNx photoconductors operating near 10 μm at 77 K are realized. The measured wavelengths are in good agreement with band gaps of the alloys calculated using a two-level band anticrossing model with Varshni relation. This work will benefit those working on midinfrared photodetectors.