With ever-increasing requirements for higher power hybrid and integrated circuits, thermal design considerations and means for thermal analysis have become of fundamental importance. A new approach for analyzing the heat flow across devices and substrates is described. Semi-analytic solutions are derived within the context of a multilayer model. These solutions are amenable to straightforward computer evaluation and can serve as a basis for computer-aided design. Important features of the heat flow in the structures, such as thermal spreading and thermal coupling, are treated, and as an example, numerical computations of temperature distributions at the surface of a hybrid device are presented and compared with the experiment.

A comprehensive approach to generation of electrothermal models of silicon carbide (SiC) power Schottky diodes is presented. Both the electrical and thermal parts of the model are behavioral. The electrical one was developed in order to accurately represent the nonlinear properties of SiC merged PiN Schottky (MPS) diodes. Its parameters are automatically obtained with a dedicated numerical procedure. The thermal model derivation differs from the earlier approaches because it is based on the analysis of thermal constant spectrum of the temperature response of a modeled device. Simple model generation and parameter extraction procedures are proposed in which no knowledge of technological data is necessary.