In this work, we have investigated the photocurrent and spectral sensitivity of the silicon/SrTiO₃:xNb/perovskite structures. The sol–gel method carried out the deposition of undoped SrTiO₃ layers as well as niobium-doped (SrTiO₃:Nb) layers at atomic concentrations of 3 and 6% Nb. The perovskite layer, CH₃NH₃PbI_3−xCl_x, has been deposited by the vacuum co-evaporation technique. The layers have been characterized by scanning electron microscopy and X-ray diffraction measurements. The volt–ampere characteristics and spectral sensitivity of the fabricated samples have been measured under illumination with selective wavelengths of 405, 450, 520, 660, 780, 808, 905, 980, and 1064 nm of laser diodes. We have shown that for different configurations of applied voltage between silicon, SrTiO₃:xNb, and CH₃NH₃PbI_3−xCl_x, the structures are photosensitive ones with a variation of photocurrent from microamperes to milliamperes depending on Nb concentration in SrTiO₃, and the highest photocurrent and spectral sensitivity values are observed when a SrTiO₃:Nb layer with 3 at.% of Nb is used. A possible application of the proposed structure with a SrTiO₃:Nb layer for perovskite solar cells and photodetectors is being discussed.

This study investigates the effect of co-doping with nanographene on the properties of FTO layers produced by spray pyrolysis. The results show that co-doping with nanographene enhances phase separation processes within the bulk of the FTO layer. The inhomogeneities formed during phase separation are depleted of fluorine compared to the film bulk. Co-doping with nanographene also significantly modifies the optical properties of the FTO layers. Specifically, it alters the position and intensity of the peaks in the reflection spectra, indicating a change in the nature of the absorbing centers. Furthermore, the optical bandgap of the FTO layers decreases with an increasing degree of nanographene doping. Finally, co-doping with nanographene reduces the resistance of the FTO layers, which can be attributed to an increase in charge carrier mobility.