The electron transport layer (ETL) is critical to carrier extraction for perovskite solar cells (PSCs). Moreover, the morphology and surface condition of the ETL could influence the topography of the perovskite layer. ZnO, TiO₂, and SnO₂ were widely investigated as ETL materials. However, TiO₂ requires a sintering process under high temperature and ZnO has the trouble of chemical instability. SnO₂ possesses the advantages of low-temperature fabrication and high conductivity, which is critical to the performance of PSCs prepared under low temperature. Here, we optimized the morphology and property of SnO₂ by modulating the concentration of a SnO₂ colloidal dispersion solution. When adjusting the concentration of SnO₂ colloidal dispersion solution to 5 wt.% (in water), SnO₂ film indicated better performance and the perovskite film has a large grain size and smooth surface. Based on high efficiency (16.82%), the device keeps a low hysteresis index (0.23).

Photoelectric devices can be so widely used in various detection industries that people began to focus on its research. The research of photoelectric sensors with high performance has become an industry goal. In this paper, we prepared photodetectors using organic–inorganic hybrid semiconductor materials with narrow bandgap hexane-1,6-diammonium pentaiodobismuth (HDA-BiI₅) and investigated the detector photoresponse and time-response characteristics under a single light source. The device exhibits high photoresponsivity and fast response time. The photoresponsivity can reach 1.45 × 10⁻³ A/W and 8.5 × 10⁻⁴ A/W under laser irradiation at 375 nm and 532 nm wavelengths, and the rise and decay times are 63 ms and 62 ms, 62 ms and 64 ms, respectively. The device has excellent performance and this work can extend the application of organic–inorganic hybrid semiconductor materials in photovoltaic and photodetectors.

With the development of the semiconductor industry, research on photoelectronic devices has been emphasized. In this paper, a molecular semiconductor material with a narrow bandgap of hexane-1,6-diammonium pentaiodobismuth (HDA-BiI₅) was utilized to prepare photodetectors without electron transport layers. Using a single light source, the effects of different wavelengths and different powers on the photoresponsivity, switching ratio, specific detectivity, and external quantum efficiency of the device were investigated. It is demonstrated that this device has excellent responsivity, specific detectivity, stability, and repeatability, and this work will help expand the application of molecular semiconductor materials for photodetection.

Since their discovery, ferroelectric materials have shown excellent dielectric responses, pyroelectricity, piezoelectricity, electro-optical effects, nonlinear optical effects, etc. They are a class of functional materials with broad application prospects. Traditional pure inorganic piezoelectric materials have better piezoelectricity but higher rigidity; pure organic piezoelectric materials have better flexibility but havetoo small a piezoelectric coefficient. The material composite, on the other hand, can combine the advantages of both, so that it has both flexibility and a high piezoelectric coefficient. In this paper, a new molecular piezoelectric material (C₅H₁₁NO)₂PbBr₄ with a high Curie temperature Tc and a large piezoelectric voltage constant g₃₃, referred to as (ATHP)₂PbBr₄, was used to prepare a 0-3 type piezoelectric composite film by compounding with an organic polymer material polyvinylidene fluoride (PVDF), and its ferroelectricity was investigated. The results show that the 0-3 type (ATHP)₂PbBr₄ piezoelectric composite film has good ferroelectricity and piezoelectricity, and the calculated piezoelectric voltage constant g₃₃ after polarization is about 358.6 × 10⁻³ Vm/N, which is higher than that of PVDF material, and is important for the fabrication of high-performance piezoelectric sensors.

It is crucial to find a good material as a hole transport layer (HTL) to improve the performance of perovskite solar cells (PSCs), devices with an inverted structure. Polyethylene dioxythiophene-poly (styrene sulfonate) (PEDOT:PSS) and inorganic nickel oxide (NiO_x) have become hotspots in the study of hole transport materials in PSCs on account of their excellent properties. In our research, NiO_x and PEDOT: PSS, two kinds of hole transport materials, were prepared and compared to study the impact of the bottom layer on the light absorption and morphology of perovskite layer. By the way, some experimental parameters are simulated by wx Analysis of Microelectronic and Photonic Structures (wxAMPS). In addition, thin interfacial layers with deep capture levels and high capture cross sections were inserted to simulate the degradation of the interface between light absorption layer and PEDOT:PSS. This work realizes the combination of experiment and simulation. Exploring the mechanism of the influence of functional layer parameters plays a vital part in the performance of devices by establishing the system design. It can be found that the perovskite film growing on NiO_x has a stronger light absorption capacity, which makes the best open-circuit voltage of 0.98 V, short-circuit current density of 24.55 mA/cm², and power conversion efficiency of 20.01%.