This review presents an up-dated summary of the fundamentals and applications of optoelectronic photovoltaic tweezers for trapping and manipulation of nano-objects on the surface of lithium niobate crystals. It extends the contents of previous reviews to cover new topics and developments which have emerged in recent years and are marking the trends for future research. Regarding the theoretical description of photovoltaic tweezers, detailed simulations of the electrophoretic and dielectrophoretic forces acting on different crystal configurations are discussed in relation to the structure of the obtained trapping patterns. As for the experimental work, we will pay attention to the manipulation and patterning of micro-and nanoparticles that has experimented an outstanding progress and relevant applications have been reported. An additional focus is now laid on recent work about micro-droplets, which is a central topic in microfluidics and optofluidics. New developments in biology and biomedicine also constitute a relevant part of the review. Finally, some topics partially related with photovoltaic tweezers and a discussion on future prospects and challenges are included.
An up-to-date review on recent results for self-trapping of free electrons and holes, as well as excitons, in strontium titanate (STO), which gives rise to small polarons and self-trapped excitons (STEs) is presented. Special attention is paid to the role of carrier and exciton self-trapping on the luminescence emissions under a variety of excitation sources with special emphasis on experiments with laser pulses and energetic ion-beams. In spite of the extensive research effort, a definitive identification of such localized states, as well as a suitable understanding of their operative light emission mechanisms, has remained lacking or controversial. However, promising advances have been recently achieved and are the objective of the present review. In particular, significant theoretical advances in the understanding of electron and hole self-trapping are discussed. Also, relevant experimental advances in the kinetics of light emission associated with electron-hole recombination have been obtained through time-resolved experiments using picosecond (ps) laser pulses. The luminescence emission mechanisms and the light decay processes from the self-trapped excitons are also reviewed. Recent results suggest that the blue emission at 2.8 eV, often associated with oxygen vacancies, is related to a transition from unbound conduction levels to the ground singlet state of the STE. The stabilization of small electron polarons by oxygen vacancies and its connection with luminescence emission are discussed in detail. Through ion-beam irradiation experiments, it has recently been established that the electrons associated with the vacancy constitute electron polaron states (Ti3+) trapped in the close vicinity of the empty oxygen sites. These experimental results have allowed for the optical identification of the oxygen vacancy center through a red luminescence emission centered at 2.0 eV. Ab-initio calculations have provided strong support for those experimental findings. Finally, the use of Cr-doped STO has offered a way to monitor the interplay between the chromium centers and oxygen vacancies as trapping sites for the electron and hole partners resulting from the electronic excitation.
A theoretical model is proposed to account for the damage and amorphization induced in by ion bombardment in the electronic energy-loss regime. It relies on the synergy between the thermal spike generated by electron-phonon interaction and the nonradiative decay of localized (self-trapped) excitons. Calculations have been carried out to describe the effect of single impact as well as multiple impact (high fluence) irradiations. In the first case, the defect concentration profile and the radius of the amorphous tracks have been theoretically predicted and they are in good accordance with those experimentally determined. For high fluence irradiations the model predicts the formation of homogeneous amorphous surface layers whose thickness increases with fluence. The propagation of the crystalline-amorphous boundary has been determined as a function of irradiation fluence. Theoretical predictions are also in good agreement with experimental data on Si-irradiated (7.5 and ) outside the region of nuclear collision damage.
Oxygen vacancies are known to play a central role in the optoelectronic properties of oxide perovskites. A detailed description of the exact mechanisms by which oxygen vacancies govern such properties, however, is still quite incomplete. The unambiguous identification of oxygen vacancies has been a subject of intense discussion. Interest in oxygen vacancies is not purely academic. Precise control of oxygen vacancies has potential technological benefits in optoelectronic devices. In this review paper, we focus our attention on the generation of oxygen vacancies by irradiation with high energy particles. Irradiation constitutes an efficient and reliable strategy to introduce, monitor, and characterize oxygen vacancies. Unfortunately, this technique has been underexploited despite its demonstrated advantages. This review revisits the main experimental results that have been obtained for oxygen vacancy centers (a) under high energy electron irradiation (100 keV–1 MeV) in LiNbO3, and (b) during irradiation with high-energy heavy (1–20 MeV) ions in SrTiO3. In both cases, the experiments have used real-time and in situ optical detection. Moreover, the present paper discusses the obtained results in relation to present knowledge from both the experimental and theoretical perspectives. Our view is that a consistent picture is now emerging on the structure and relevant optical features (absorption and emission spectra) of these centers. One key aspect of the topic pertains to the generation of self-trapped electrons as small polarons by irradiation of the crystal lattice and their stabilization by oxygen vacancies. What has been learned by observing the interplay between polarons and vacancies has inspired new models for color centers in dielectric crystals, models which represent an advancement from the early models of color centers in alkali halides and simple oxides. The topic discussed in this review is particularly useful to better understand the complex effects of different types of radiation on the defect structure of those materials, therefore providing relevant clues for nuclear engineering applications.
1 March 1991 in IEEE Journal of Quantum Electronics