We present the design and characterization of a large-area, fast-gated, all-digital single-photon detector with programmable active area, internal gate generator, and time-to-digital converter (TDC) with a built-in histogram builder circuit, suitable for performing high-sensitivity time-domain near-infrared spectroscopy (TD-NIRS) measurements when coupled with pulsed laser sources. We used a novel low-power differential sensing technique that optimizes area occupation. The photodetector is a time-gated digital silicon photomultiplier (dSiPM) with an 8.6-mm² photosensitive area, 37% fill-factor, and ~300 ps (20%-80%) gate rising edge, based on low-noise single-photon avalanche diodes (SPADs) and fabricated in 0.35-μm CMOS technology. The built-in TDC with a histogram builder has a least-significant-bit (LSB) of 78 ps and 128 time-bins, and the integrated circuit can be interfaced directly with a low-cost microcontroller with a serial interface for programming and readout. Experimental characterization demonstrated a temporal response as good as 300-ps full-width at half-maximum (FWHM) and a dynamic range >100 dB (thanks to the programmable active area size). This microelectronic detector paves the way for a miniaturized, stand-alone, multi-wavelength TD-NIRS system with an unprecedented level of integration and responsivity, suitable for portable and wearable systems.

We present the design and characterization of a fully-integrated array of 16 × 16 Single-Photon Avalanche Diodes (SPADs) with fast-gating capabilities and 16 on-chip 6 ps time-to-digital converters, which has been embedded in a compact imaging module. Such sensor has been developed for Non-Line-Of-Sight imaging applications, which require: i) a narrow instrument response function, for a centimeter-accurate single-shot precision; ii) fast-gated SPADs, for time-filtering of directly reflected photons; iii) high photon detection probability, for acquiring faint signals undergoing multiple scattering events. Thanks to a novel multiple differential SPAD-SPAD sensing approach, SPAD detectors can be swiftly activated in less than 500 ps and the full-width at half maximum of the instrument response function is always less than 75 ps (60 ps on average). Temporal responses are consistently uniform throughout the gate window, showing just few picoseconds of time dispersion when 30 ns gate pulses are applied, while the differential non-linearity is as low as 250 fs. With a photon detection probability peak of 70% at 490 nm, a fill-factor of 9.6% and up to 1.6 ∙ 10⁸ photon time-tagging measurements per second, such sensor fulfills the demand for fully-integrated imaging solutions optimized for non-line-of-sight imaging applications, enabling to cut exposure times while also optimizing size, weight, power and cost, thus paving the way for further scaled architectures.

We present the design and experimental characterization of a CMOS sensor based on Single-Photon Avalanche Diodes for direct Time-Of-Flight single-point distance ranging, under high background illumination for short-range applications. The sensing area has a rectangular shape (40 W 10 SPADs) to deal with the backscattered light spot displacement across the detector, dependent on target distance, due to the non-confocal optical setup. Since only few SPADs are illuminated by the laser spot, we implemented a smart laser-spot tracking within the active area, so to define the specific Region-Of-Interest (ROI) with only SPADs hit by signal photons and a smart sharing of the timing electronics, so to significantly improve Signal-to-Noise Ratio (SNR) of TOF measurements and to reduce overall chip area and power consumption. The timing electronics consists of 80 Time-to-Digital Converter (TDC) shared among the 400 SPADs with a self-reconfigurable routing, which dynamically connects the SPADs within the ROI to the available TDCs. The latter have 78 ps resolution and 20 ns Full-Scale Range (FSR), i.e., up to 2 m maximum distance range. An on-chip histogram builder block accumulates TDC conversions so to provide the final TOF histogram. We achieve a precision better than 2.3 mm at 1 m distance and 80% target reflectivity, with 3 klux halogen lamp background illumination and 2 kHz measurement rate. The sensor rejects 10 klux of background light, still with a precision better than 20 mm at 2 m.

Light Detection and Ranging (LiDAR) is a widespread technique for 3D ranging and has widespread use in most automated systems that must interact with the external environment, for instance in industrial and security applications. In this work, we study a novel architecture for Single Photon Avalanche Diode (SPAD) arrays suitable for handheld single point rangefinders, which is aimed at the identification of the objects’ position in the presence of strong ambient background illumination. The system will be developed for an industrial environment, and the array targets a distance range of about 1 m and a precision of few centimeters. Since the laser spot illuminates only a small portion of the array, while all pixels are exposed to background illumination, we propose and validate through Monte Carlo simulations a novel architecture for the identification of the pixels illuminated by the laser spot to perform an adaptive laser spot tracking and a smart sharing of the timing electronics, thus significantly improving the accuracy of the distance measurement. Such a novel architecture represents a robust and effective approach to develop SPAD arrays for industrial applications with extremely high background illumination.

Fast time-gated single-photon detectors demonstrated high depth sensitivity in the detection of localized absorption perturbations inside scattering media, but their use for in vivo clinical applications—such as functional imaging of brain activation—was impaired by their small ( < 0.04 m m 2 ) active area. Here, we demonstrate, both on phantoms and in vivo, the performance of a fast-gated digital silicon photomultiplier (SiPM) that features an overall active area of 8.6 m m 2 , overcoming the photon collection capability of established time-gated single-pixel detectors by orders of magnitude, enabling deep investigations within scattering media and high signal-to-noise ratios at late photon arrival times.

In this work, we present a novel Time-to-Digital Converter (TDC) for single-chip integration in Single-Photon Avalanche-Diode (SPAD) array and digital Silicon Photomultiplier (SiPM). Such novel detector-timing electronics combination will be suitable for Time-Correlated Single-Photon Counting (TCSPC) applications and direct Time-Of-Flight (TOF) measurements. The proposed TDC is based on a 200 MHz 4-bit counter that guarantees a Full-Scale Range of 80 ns. Two interpolators exploit the sliding scale technique to reduce the Differential Non-Linearity (DNL). Besides the coarse interpolation, the multi-stage interpolators have a novel dual-fine interpolation that guarantees a resolution as good as 7 ps, with a conversion time (<; 50 ns) much shorter compared to typical architectures based on Vernier delay lines.