Avalanche photodiodes, which operate above the breakdown voltage in Geiger mode connected with avalanche-quenching circuits, can be used to detect single photons and are therefore called single-photon avalanche diodes SPAD’s. Circuit configurations suitable for this operation mode are critically analyzed and their relative merits in photon counting and timing applications are assessed. Simple passive-quenching circuits (PQC’s), which are useful for SPAD device testing and selection, have fairly limited application. Suitably designed active-quenching circuits (AQC’s) make it possible to exploit the best performance of SPAD’s. Thick silicon SPAD’s that operate at high voltages (250–450 V) have photon detection efficiency higher than 50% from 540- to 850-nm wavelength and still ~3% at 1064 nm. Thin silicon SPAD’s that operate at low voltages (10–50 V) have 45% efficiency at 500 nm, declining to 10% at 830 nm and to as little as 0.1% at 1064 nm. The time resolution achieved in photon timing is 20 ps FWHM with thin SPAD’s; it ranges from 350 to 150 ps FWHM with thick SPAD’s. The achieved minimum counting dead time and maximum counting rate are 40 ns and 10 Mcps with thick silicon SPAD’s, 10 ns and 40 Mcps with thin SPAD’s. Germanium and III–V compound semiconductor SPAD’s extend the range of photon-counting techniques in the near-infrared region to at least 1600-nm wavelength.

Silicon single-photon avalanche diodes (SPADs) are nowadays a solid-state alternative to photomultiplier tubes (PMTs) in single-photon counting (SPC) and time-correlated single-photon counting (TCSPC) over the visible spectral range up to 1-mum wavelength. SPADs implemented in planar technology compatible with CMOS circuits offer typical advantages of microelectronic devices (small size, ruggedness, low voltage, low power, etc.). Furthermore, they have inherently higher photon detection efficiency, since they do not rely on electron emission in vacuum from a photocathode as do PMTs, but instead on the internal photoelectric effect. However, PMTs offer much wider sensitive area, which greatly simplifies the design of optical systems; they also attain remarkable performance at high counting rate, and offer picosecond timing resolution with microchannel plate models. In order to make SPAD detectors more competitive in a broader range of SPC and TCSPC applications, it is necessary to face several issues in the semiconductor device design and technology. Such issues will be discussed in the context of the two possible approaches to such a challenge: employing a standard industrial high-voltage CMOS technology or developing a dedicated CMOS-compatible technology. Advances recently attained in the development of SPAD detectors will be outlined and discussed with reference to both single-element detectors and integrated detector arrays.

We present a CMOS imager consisting of 32×32 smart pixels, each one able to detect single photons in the 300-900 nm wavelength range and to perform both photon-counting and photon-timing operations on very fast optical events with faint intensities. In photon-counting mode, the imager provides photon-number (i.e, intensity) resolved movies of the scene under observation, up to 100 000 frames/s. In photon-timing, the imager provides photon arrival times with 312 ps resolution. The result are videos with either time-resolved (e.g., fluorescence) maps of a sample, or 3-D depth-resolved maps of a target scene. The imager is fabricated in a cost-effective 0.35-μm CMOS technology, automotive certified. Each pixel consists of a single-photon avalanche diode with 30 μm photoactive diameter, coupled to an in-pixel 10-bit time-to-digital converter with 320-ns full-scale range, an INL of 10% LSB and a DNL of 2% LSB. The chip operates in global shutter mode, with full frame times down to 10 μs and just 1-ns conversion time. The reconfigurable imager design enables a broad set of applications, like time-resolved spectroscopy, fluorescence lifetime imaging, diffusive optical tomography, molecular imaging, time-of-flight 3-D ranging and atmospheric layer sensing through LIDAR.

Light Detection and Ranging (LiDAR) is a 3D imaging technique, widely used in many applications such as augmented reality, automotive, machine vision, spacecraft navigation and landing. Achieving long-ranges and high-speed, most of all in outdoor applications with strong solar background illumination, are challenging requirements. In the introduction we review different 3D-ranging techniques (stereo-vision, projection with structured light, pulsed-LiDAR, amplitude-modulated continuous-wave LiDAR, frequency-modulated continuous-wave interferometry), illumination schemes (single point and blade scanning, flash-LiDAR) and time-resolved detectors for LiDAR (EM-CCD, I-CCD, APD, SPAD, SiPM). Then, we provide an extensive review of silicon- single photon avalanche diode (SPAD)-based LiDAR detectors (both commercial products and research prototypes) analyzing how each architecture faces the main challenges of LiDAR (i.e., long ranges, centimeter resolution, large field-of-view and high angular resolution, high operation speed, background immunity, eye-safety and multi-camera operation). Recent progresses in 3D stacking technologies provided an important step forward in SPAD array development, allowing to reach smaller pitch, higher pixel count and more complex processing electronics. In the conclusions, we provide some guidelines for the design of next generation SPAD-LiDAR detectors.