Xiaolei Wang

Prof. Dr. Xiaolei Wang

School of Physics and Optoelectronics, Faculty of Science, Beijing University of Technology, Beijing 100124, China
orcid

Research Focus & Metrics

Academic Career Length

7Years (2020-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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27 December 2023 in ACS Nano
Verified
Journal Article
Closed access
LLLinfeng Li
Linfeng Li
XZXia Zhang
Xia Zhang
MHMuhammad Humayun
Muhammad Humayun
XXXuefei Xu
Xuefei Xu
ZSZixuan Shang
Zixuan Shang
Chundong WangChundong Wang
Chundong Wang

31 January 2022 in Nature Communications
Verified
Journal Article
Open access
PDF file
XJXingan Jiang
Xingan Jiang
Xueyun WangXueyun Wang
Xueyun Wang
Xiaolei WangXiaolei Wang
Xiaolei Wang
XZXiangping Zhang
Xiangping Zhang
RNRuirui Niu
Ruirui Niu
Jiawang HongJiawang Hong
Jiawang Hong
Developing a single-phase self-rectifying memristor with the continuously tunable feature is structurally desirable and functionally adaptive to dynamic environmental stimuli variations, which is the pursuit of further smart memristors and neuromorphic computing. Herein, we report a van der Waals ferroelectric CuInP2S6 as a single memristor with superior continuous modulation of current and self-rectifying to different bias stimuli (sweeping speed, direction, amplitude, etc.) and external mechanical load. The synergetic contribution of controllable Cu+ ions migration and interfacial Schottky barrier is proposed to dynamically control the current flow and device performance. These outstanding sensitive features make this material possible for being superior candidate for future smart memristors with bidirectional operation mode and strong recognition to input faults and variations.

15 February 2023 in Nature Communications
Verified
Journal Article
Open access
PDF file
Xiaolei WangXiaolei Wang
Xiaolei Wang
ZSZixuan Shang
Zixuan Shang
CZChen Zhang
Chen Zhang
JKJiaqian Kang
Jiaqian Kang
TLTao Liu
Tao Liu
JZJianhua Zhao
Jianhua Zhao
Multiferroic materials have great potential in non-volatile devices for low-power and ultra-high density information storage, owing to their unique characteristic of coexisting ferroelectric and ferromagnetic orders. The effective manipulation of their intrinsic anisotropy makes it promising to control multiple degrees of the storage “medium”. Here, we have discovered intriguing in-plane electrical and magnetic anisotropies in van der Waals (vdW) multiferroic CuCrP2S6. The uniaxial anisotropies of current rectifications, magnetic properties and magnon modes are demonstrated and manipulated by electric direction/polarity, temperature variation and magnetic field. More important, we have discovered the spin-flop transition corresponding to specific resonance modes, and determined the anisotropy parameters by consistent model fittings and theoretical calculations. Our work provides in-depth investigation and quantitative analysis of electrical and magnetic anisotropies with the same easy axis in vdW multiferroics, which will stimulate potential device applications of artificial bionic synapses, multi-terminal spintronic chips and magnetoelectric devices.

2 November 2020 in ACS Nano
Verified
Journal Article
Closed access
TLTianhan Liu
Tianhan Liu
Xiaolei WangXiaolei Wang
Xiaolei Wang
HWHailong Wang
Hailong Wang
GSGang Shi
Gang Shi
FGFan Gao
Fan Gao
PXPeng Xiong
Peng Xiong

22 October 2024 in ACS Nano
Verified
Journal Article
Closed access
ZSZixuan Shang
Zixuan Shang
LLLingchen Liu
Lingchen Liu
GWGuangcheng Wang
Guangcheng Wang
HXHao Xu
Hao Xu
YCYuanyuan Cui
Yuanyuan Cui
Xiaolei WangXiaolei Wang
Xiaolei Wang

14 July 2022 in Small
Verified
Journal Article
Closed access
ZSZixuan Shang
Zixuan Shang
TLTianhan Liu
Tianhan Liu
QYQianqian Yang
Qianqian Yang
SCShuainan Cui
Shuainan Cui
KXKailin Xu
Kailin Xu
Xiaolei WangXiaolei Wang
Xiaolei Wang