Fabricating Quartz: Quartz is used industrially as an abrasive, as an inert glassy material, or for high-quality crystals in microelectronics. It is also valued for its piezoelectronic properties. However, it is hard to grow quartz as a patterned material or to integrate it into nanostructured devices. Carretero-Genevrier et al. (p. 827 ; see the Perspective by Brinker and Clem ) have developed a method for preparing oriented epitaxial thin films of polycrystalline α-quartz on single-crystal silicon substrates using ambient pressure and temperatures below 1000°C. Different processing conditions can be used to fabricate quartz films with a variety of pore sizes or as a dense nonporous α-quartz film.

While piezoelectric and ferroelectric materials play a key role in many everyday applications, there are still a number of open questions related to their physics. To enhance our understanding of piezoelectrics and ferroelectrics, nanoscale characterization is essential. Here, we develop an atomic force microscopy based mode that obtains a direct quantitative analysis of the piezoelectric coefficient d₃₃. We report nanoscale images of piezogenerated charge in a thick single crystal of periodically poled lithium niobate (PPLN), a bismuth ferrite (BiFO₃) thin film, and lead zirconate titanate (PZT) by applying a force and recording the current produced by these materials. The quantification of d₃₃ coefficients for PPLN (14 ± 3 pC per N) and BFO (43 ± 6 pC per N) is in agreement with the values reported in the literature. Even stronger evidence of the reliability of the method is provided by an equally accurate measurement of the significantly larger d₃₃ of PZT.

The properties of a material depend upon its physical characteristics, one of these being its crystalline state. Next generation solid-state technologies will integrate crystalline oxides into thermal sensitive processes and composite materials. Crystallization of amorphous phases of metal oxides in the solid state typically requires substantial energy input to induce the amorphous to crystalline phase transformation. In the case of silica, the transformation to α-quartz in a furnace occurs above 1300 °C and that of titania, above 400 °C. These calcination processes are costly in energy but also often degrade complex material architectures or compositions. Thus, low temperature crystallization techniques are required that preserve macro- and mesostructures and complex elemental composition (e.g., organic-, metal-, and semiconductor-metal oxide hybrids/composites). Some solution-based techniques exist to directly fabricate crystalline metal oxides. However, these are not always compatible with the specificities of the system or industrial constraints. A postsynthetic, solid-state approach that reduces crystallization temperature in metal oxides is metal-induced crystallization (MIC). MIC is the introduction of catalytic amounts of a cation, which can be an s-block, p-block, or d-block cation, that migrates through the solid metal oxide lattice. The cation is thought to temporarily break metal oxide bonds, allowing [MO_x] polyhedra to rotate and reform bonds with neighboring [MO_x] groups in a lower energy crystalline phase. Depending on the system, the cation can favor or defavor the formation of a particular crystalline phase, providing a means to tune the purity and crystalline phase ratios. An advantage of MIC is that, although the crystallization occurs in the solid state, the crystallization process can be accomplished for particle suspensions in liquid media. In this case, the energy required to induce the crystallization can come from, for example, a microwave or an ultrasound bath. The crystallization of particles in suspension avoids aggregation from particle–particle sintering. In the case of thin films, the energy for crystallization typically comes from a laser or calcination. MIC is only recently being used as a low temperature metal oxide crystallization technique, despite being widely used in the semiconductor industry. Here, the mechanism and previous studies in MIC are presented for titania, silica, and other oxides. The beauty of this technique is that it is extremely easy to employ: cations can be incorporated into the system postsynthetically and then are often expelled from the lattice upon phase conversion. We expect MIC to enrich materials for photochromic, optoelectronic, catalyst, biological, and other applications.