The anomalous Nernst effect generates a voltage transverse to an applied thermal gradient in some magnetically ordered systems. While the effect was considered excluded in compensated magnetic materials with collinear ordering, in the recently identified symmetry-class of altermagnets, the anomalous Nernst effect is possible despite the compensated collinear spin arrangement. In this work, we show that epitaxial Mn₅Si₃ thin films grown on Si manifest an anomalous Nernst effect with a finite spontaneous signal at zero magnetic field despite the vanishing spontaneous magnetization. We attribute this to the previously theoretically predicted and experimentally corroborated altermagnetism of epitaxial Mn₅Si₃ thin films grown on Si. The observed spontaneous anomalous Nernst coefficient reaches the value of 0.26 μV/K with the corresponding spontaneous Nernst conductivity of 0.22 A/(K ⋅ m). To complement our measurements, we perform density-functional theory calculations of the momentum-resolved anomalous Nernst conductivity, highlighting the contributions of altermagnetic pseudonodal surfaces and ladder transitions to the Berry curvature. Our results illustrate the value of unconventional d-wave wave altermagnets composed of abundant and non-toxic light elements for thermo-electrics and spin-caloritronics.

Tensile-strained and n-doped Ge has emerged as a potential candidate for the realization of optoelectronic devices that are compatible with the mainstream silicon technology. Tensile-strained Ge/Si epilayers can be obtained by using the difference of thermal expansion coefficients between Ge and Si. We have combined various surface, structural, and compositional characterizations to investigate the growth mode and the strain state in Ge/Si epilayers grown by molecular-beam epitaxy. The Ge growth was carried out using a two-step approach: a low-temperature growth to produce relaxed and smooth buffer layers, which is followed by a high-temperature growth to get high quality Ge layers. The existence of a substrate temperature window from 260 to 300 °C is evidenced, which allows to completely suppress the Ge/Si Stranski-Krastanov growth. As a consequence of the high temperature growth, a tensile strain lying in the range of 0.22%–0.24% is obtained. Concerning the effect of thermal annealing, it is shown that cyclic annealing may allow increasing the tensile strain up to 0.30%. Finally, we propose an approach to use carbon adsorption to suppress Si/Ge interdiffusion, which represents one of the main obstacles to overcome in order to realize pure Ge-based optoelectronic devices.

Three-dimensionally (3D) nanoarchitectured palladium/nickel (Pd/Ni) catalysts, which were prepared by atomic layer deposition (ALD) on high-aspect-ratio nanoporous alumina templates are investigated with regard to the electrooxidation of formic acid in an acidic medium (0.5 M H₂SO₄). Both deposition processes, Ni and Pd, with various mass content ratios have been continuously monitored by using a quartz crystal microbalance. The morphology of the Pd/Ni systems has been studied by electron microscopy and shows a homogeneous deposition of granularly structured Pd onto the Ni substrate. X-ray diffraction analysis performed on Ni and NiO substrates revealed an amorphous structure, while the Pd coating crystallized into a fcc lattice with a preferential orientation along the [220]-direction. Surface chemistry analysis by X-ray photoelectron spectroscopy showed both metallic and oxide contributions for the Ni and Pd deposits. Cyclic voltammetry of the Pd/Ni nanocatalysts revealed that the electrooxidation of HCOOH proceeds through the direct dehydrogenation mechanism with the formation of active intermediates. High catalytic activities are measured for low masses of Pd coatings that were generated by a low number of ALD cycles, probably because of the cluster size effect, electronic interactions between Pd and Ni, or diffusion effects.

Some magnetically ordered phases of the ${\mathrm{Mn}}_5{\mathrm{Si}}_3$ crystal are proving to be prototypes for the study of the new fundamental spin physics related to the spontaneous breaking of the time-reversal symmetry despite a zero net magnetization. Here, we report on a route to grow epitaxial ${\mathrm{Mn}}_5{\mathrm{Si}}_3$ thin films on Si(111). To this end, we use Mn and Si codeposition in a molecular beam epitaxy system and carefully tune the deposition rates, the growth temperature, and the annealing temperature. We assessed the silicide phase-formation and morphology using reflection high-energy electron diffraction, x-ray diffraction, high-resolution transmission electron microscopy (HRTEM) and atomic force microscopy. Layers containing only ${\mathrm{Mn}}_5{\mathrm{Si}}_3$ could be stabilized under very restrictive conditions, by tuning the Mn/Si flux ratio to match the compound stoichiometry and adjusting the substrate temperature during growth to 443 K. HRTEM imaging revealed the existence of an interfacial amorphous layer of few nanometers thickness. Annealing the heterostructure up to 573 K led to the formation of MnSi at the vicinity of the ${\mathrm{Mn}}_5{\mathrm{Si}}_3$/Si(111) interface, which significantly reduced the nucleation barrier of ${\mathrm{Mn}}_5{\mathrm{Si}}_3$. High-quality crystalline ${\mathrm{Mn}}_5{\mathrm{Si}}_3$ thin films were then formed with the following epitaxial relationships: ${\mathrm{Mn}}_5{\mathrm{Si}}_3$(0001)$\left[01\overline{1}0\right]//\mathrm{MnSi}\left(111\right)\left[\overline{2}11\right]//\mathrm{Si}\left(111\right)\left[1\overline{1}0\right]$. Our experiments showed that the formation of MnSi is enhanced at a growth temperature above 473 K or for a longer annealing step, while the crystalline quality of the ${\mathrm{Mn}}_5{\mathrm{Si}}_3$ overlayer is correspondingly degraded leading to textured thin films. The growth pathways and structural properties of the manganese silicides can be rationalized in terms of reactions maximizing the free-energy lowering rate. Moreover, we found that the magnetic and the magnetotransport properties can be used as an efficient tool to track both ${\mathrm{Mn}}_5{\mathrm{Si}}_3$ crystallinity and proportion in the deposited layers.

High crystalline quality Mn5Ge3 films with thicknesses ranging 4\char21{}200 nm have been grown on Ge(111) substrates by solid phase epitaxy. The basal hexagonal plane of Mn5Ge3 is in epitaxy with the Ge(111) plane. Magnetic properties of the films have been investigated as a function of the film thickness and the magnetization curves have been analyzed using a theory that includes a description of magnetic domains in uniaxial thin films. The results clearly indicate the existence of a critical thickness below which the magnetic stripe phase disappears. We have determined the value of this thickness to lie between 10 and 25 nm from the analysis of experimental magnetization curves and the theoretical fit of the in-plane remanent magnetization. Although analogies can be drawn between the behavior observed in our system and that of hcp Co, we have shown that the critical thickness is considerably smaller in Mn5Ge3; this has the potential to open new fields of applications for Mn5Ge3 thin films in magnetic recording and spintronics.