Zinc sulfide (ZnS) thin films prepared using the chemical bath deposition (CBD) method have demonstrated great viability in various uses, encompassing photonics, field emission devices, field emitters, sensors, electroluminescence devices, optoelectronic devices, and are crucial as buffer layers of solar cells. These semiconducting thin films for industrial and research applications are popular among researchers. CBD appears attractive due to its simplicity, cost-effectiveness, low energy consumption, low-temperature compatibility, and superior uniformity for large-area deposition. However, numerous parameters influence the CBD mechanism and the quality of the thin films. This study offers a comprehensive review of the impact of various parameters that can affect different properties of ZnS films grown on CBD. This paper provides an extensive review of the film growth and structural and optical properties of ZnS thin films influenced by various parameters, which include complexing agents, the concentration ratio of the reactants, stirring speed, humidity, deposition temperature, deposition time, pH value, precursor types, and annealing temperature environments. Various studies screened the key influences on the CBD parameters concerning the quality of the resulting films. This work will motivate researchers to provide additional insight into the preparation of ZnS thin films using CBD to optimize this deposition method to its fullest potential.

At the 90-nm node, the rate of transistor miniaturization slows down due to challenges in overcoming the increased leakage current (I_off). The invention of high-k/metal gate technology at the 45-nm technology node was an enormous step forward in extending Moore’s Law. The need to satisfy performance requirements and to overcome the limitations of planar bulk transistor to scales below 22 nm led to the development of fully depleted silicon-on-insulator (FDSOI) and fin field-effect transistor (FinFET) technologies. The 28-nm wafer planar process is the most cost-effective, and scaling towards the sub-10 nm technology node involves the complex integration of new materials (Ge, III-V, graphene) and new device architectures. To date, planar transistors still command >50% of the transistor market and applications. This work aims to downscale a planar PMOS to a 14-nm gate length using La₂O₃ as the high-k dielectric material. The device was virtually fabricated and electrically characterized using SILVACO. Taguchi L9 and L27 were employed to study the process parameters’ variability and interaction effects to optimize the process parameters to achieve the required output. The results obtained from simulation using the SILVACO tool show good agreement with the nominal values of PMOS threshold voltage (V_th) of −0.289 V ± 12.7% and I_off of less than 10⁻⁷ A/µm, as projected by the International Technology Roadmap for Semiconductors (ITRS). Careful control of SiO₂ formation at the Si interface and rapid annealing processing are required to achieve La₂O₃ thermal stability at the target equivalent oxide thickness (EOT). The effects of process variations on V_th, I_on and I_off were investigated. The improved voltage scaling resulting from the lower V_th value is associated with the increased I_off due to the improved drain-induced barrier lowering as the gate length decreases. The performance of the 14-nm planar bulk PMOS is comparable to the performance of the FDSOI and FinFET technologies at the same gate length. The comparisons made with ITRS, the International Roadmap for Devices and Systems (IRDS), and the simulated and experimental data show good agreement and thus prove the validity of the developed model for PMOSs. Based on the results demonstrated, planar PMOSs could be a feasible alternative to FDSOI and FinFET in balancing the trade-off between performance and cost in the 14-nm process.

The effect of Mo thin film deposition power in DC sputtering on the formation of a MoSe₂ interfacial layer grown via the annealing of CIGSe/Mo precursors in an Se-free atmosphere was investigated. A Mo layer was deposited on glass substrates using the DC magnetron sputtering method. Its electrical resistivity, as well as its morphological, structural, and adhesion characteristics, were analyzed regarding the deposition power. In the case of thinner films of about 300 nm deposited at 80 W, smaller grains and a lower volume percentage of grain boundaries were found, compared to 510 nm thick film with larger agglomerates obtained at 140 W DC power. By increasing the deposition power, in contrast, the conductivity of the Mo film significantly improved with lowest sheet resistance of 0.353 Ω/square for the sample deposited at 140 W. Both structural and Raman spectroscopy outputs confirmed the pronounced formation of MoSe₂, resulting from Mo films with predominant (110) orientated planes. Sputtered Mo films deposited at 140 W power improved Mo crystals and the growth of MoSe₂ layers with a preferential (103) orientation upon the Se-free annealing. With a more porous Mo surface structure for the sample deposited at higher power, a larger contact area developed between the Mo films and the Se compound was found from the CIGSe film deposited on top of the Mo, favoring the formation of MoSe₂. The CIGSe/Mo hetero-contact, including the MoSe₂ layer with controlled thickness, is not Schottky-type, but a favourable ohmic-type, as evaluated by the dark I-V measurement at room temperature (RT). These findings support the significance of regulating the thickness of the unintentional MoSe₂ layer growth, which is attainable by controlling the Mo deposition power. Furthermore, while the adhesion between the CIGSe absorber layer and the Mo remains intact, the resistance of final devices with the Ni/CIGSe/Mo structure was found to be directly linked to the MoSe₂ thickness. Consequently, it addresses the importance of MoSe₂ structural properties for improved CIGSe solar cell performance and stability.

This research examines and analyses the solar cell performance of methylammonium lead triiodide (MAPbI3) perovskite solar cells (PSC) that utilize Polyaniline (PANI)-doped-graphene oxide (GO) as HTL. Additionally, the study used the SCAPS-1D simulation software to model and analyze the experimental data. The simulated data generated by the SCAPS-1D software is afterward compared to the experimental findings. This comparison serves as a foundation for further optimization of the solar cell's performance. This study explicitly examined the impact of layer thickness and doping density on device performance in order to determine which parameters should be optimized to enhance overall performance. The SCAPS-1D simulation obtained a highest power conversion efficiency (PCE) of 15.37%. This work presented an improved efficiency of 40% from the experimental data. The findings of our study have the potential to be used in the prediction of key parameters for the optimization of perovskite solar cells (PSCs) using doped PANI/GO as a hole transport layer (HTL).

In this work, the Taguchi Method approach is used to optimize graphene oxide (GO) as the hole transport layer (HTL) in inverted perovskite solar cells (IPSC). By using this method, the data from the numerical modelling Solar Cell Capacitance Simulator-One Dimensional (SCAPS-1D) was optimized. While it has distinct parameter results and diverse causes, it also takes a long time to complete the analysis process. The Taguchi method is reported to be able to find the most significant factor and reduce the parameter variations in less time. The Taguchi algorithm is used in this experiment because it is based on orthogonal array (OA) experiments, which provide a substantially smaller variance for the experiment with optimal control parameter values. SCAPS-1D software was used to simulate the IPSC with GO as HTL. The results obtained with the software are then analysed and compared with the performance of the solar cell. The final results show that the Taguchi Method optimized IPSC with GO as HTL achieved better Power Conversion Efficiency (PCE) compared to previous researchers, with the efficiency increasing from 18.53%.to 23.408%.