The Malaysian Government has set an ambitious target to achieve a higher penetration of Renewable Energy (RE) in the Malaysian energy mix. To date, Malaysia has approximately 2% of its energy coming from RE generation sources compared to the total generation mix and targets achieving 20% penetration by 2025. The current energy mix for Malaysia power generation is mainly provided by natural gas and coal. The discussion will cover the traditional sources of generation including natural gas, coal and big hydro stations. In addition, the paper will cover in depth the potential of RE in the country, challenges, and opportunities in this sector. This study can give an initial evaluation of the Malaysian energy industry, especially for RE and can initiate further research and development in this area in order to support the Government target to achieve RE target of 20% by 2025.

Zinc sulfide (ZnS) thin films prepared using the chemical bath deposition (CBD) method have demonstrated great viability in various uses, encompassing photonics, field emission devices, field emitters, sensors, electroluminescence devices, optoelectronic devices, and are crucial as buffer layers of solar cells. These semiconducting thin films for industrial and research applications are popular among researchers. CBD appears attractive due to its simplicity, cost-effectiveness, low energy consumption, low-temperature compatibility, and superior uniformity for large-area deposition. However, numerous parameters influence the CBD mechanism and the quality of the thin films. This study offers a comprehensive review of the impact of various parameters that can affect different properties of ZnS films grown on CBD. This paper provides an extensive review of the film growth and structural and optical properties of ZnS thin films influenced by various parameters, which include complexing agents, the concentration ratio of the reactants, stirring speed, humidity, deposition temperature, deposition time, pH value, precursor types, and annealing temperature environments. Various studies screened the key influences on the CBD parameters concerning the quality of the resulting films. This work will motivate researchers to provide additional insight into the preparation of ZnS thin films using CBD to optimize this deposition method to its fullest potential.

The influence of Molybdenum diselenide (MoSe₂) as an interfacial layer between Cu(In,Ga)Se₂ (CIGS) absorber layer and Molybdenum (Mo) back contact in a conventional CIGS thin-film solar cell was investigated numerically using SCAPS-1D (a Solar Cell Capacitance Simulator). Using graded bandgap profile of the absorber layer that consist of both back grading (BG) and front grading (FG), which is defined as double grading (DG), attribution to the variation in Ga content was studied. The key focus of this study is to explore the combinatorial effects of MoSe₂ contact layer and Ga grading of the absorber to suppress carrier losses due to back contact recombination and resistance that usually occur in case of standard Mo thin films. Thickness, bandgap energy, electron affinity and carrier concentration of the MoSe₂ layer were all varied to determine the best configuration for incorporating into the CIGS solar cell structure. A bandgap grading profile that offers optimum functionality in the proposed configuration with additional MoSe₂ layer has also been investigated. From the overall results, CIGS solar cells with thin MoSe₂ layer and high acceptor doping concentration have been found to outperform the devices without MoSe₂ layer, with an increase in efficiency from 20.19% to 23.30%. The introduction of bandgap grading in the front and back interfaces of the absorber layer further improves both open-circuit voltage (V_OC) and short-circuit current density (J_SC), most likely due to the additional quasi-electric field beneficial for carrier collection and reduced back surface and bulk recombination. A maximum power conversion efficiency (PCE) of 28.06%, fill factor (FF) of 81.89%, J_SC of 39.45 mA/cm², and V_OC of 0.868 V were achieved by optimizing the properties of MoSe₂ layer and bandgap grading configuration of the absorber layer. This study provides an insight into the different possibilities for designing higher efficiency CIGS solar cell structure through the manipulation of naturally formed MoSe₂ layer and absorber bandgap engineering that can be experimentally replicated.

Renewable Energy (RE) penetration is a new phenomenon in power systems. In the advent of high penetration of RE in the systems, several issues have to be addressed especially when it involves the stability and flexibility of the power systems. Battery Energy Storage System (BESS) has gained popularity due to its capability to store energy and to serve multiple purposes in solving various power system concerns. Additionally, several BESS can be combined to operate as Virtual Power Plant (VPP). This study will involve the design and implementation of BESS for five potential customer sites for the demonstration project and to be possibly integrated into one VPP system. The study is expected to demonstrate bill savings to the customers with BESS due to peak demand reduction and energy arbitrage savings.Renewable Energy (RE) penetration is a new phenomenon in power systems. In the advent of high penetration of RE in the systems, several issues have to be addressed especially when it involves the stability and flexibility of the power systems. Battery Energy Storage System (BESS) has gained popularity due to its capability to store energy and to serve multiple purposes in solving various power system concerns. Additionally, several BESS can be combined to operate as Virtual Power Plant (VPP). This study will involve the design and implementation of BESS for five potential customer sites for the demonstration project and to be possibly integrated into one VPP system. The study is expected to demonstrate bill savings to the customers with BESS due to peak demand reduction and energy arbitrage savings.

The effect of Mo thin film deposition power in DC sputtering on the formation of a MoSe₂ interfacial layer grown via the annealing of CIGSe/Mo precursors in an Se-free atmosphere was investigated. A Mo layer was deposited on glass substrates using the DC magnetron sputtering method. Its electrical resistivity, as well as its morphological, structural, and adhesion characteristics, were analyzed regarding the deposition power. In the case of thinner films of about 300 nm deposited at 80 W, smaller grains and a lower volume percentage of grain boundaries were found, compared to 510 nm thick film with larger agglomerates obtained at 140 W DC power. By increasing the deposition power, in contrast, the conductivity of the Mo film significantly improved with lowest sheet resistance of 0.353 Ω/square for the sample deposited at 140 W. Both structural and Raman spectroscopy outputs confirmed the pronounced formation of MoSe₂, resulting from Mo films with predominant (110) orientated planes. Sputtered Mo films deposited at 140 W power improved Mo crystals and the growth of MoSe₂ layers with a preferential (103) orientation upon the Se-free annealing. With a more porous Mo surface structure for the sample deposited at higher power, a larger contact area developed between the Mo films and the Se compound was found from the CIGSe film deposited on top of the Mo, favoring the formation of MoSe₂. The CIGSe/Mo hetero-contact, including the MoSe₂ layer with controlled thickness, is not Schottky-type, but a favourable ohmic-type, as evaluated by the dark I-V measurement at room temperature (RT). These findings support the significance of regulating the thickness of the unintentional MoSe₂ layer growth, which is attainable by controlling the Mo deposition power. Furthermore, while the adhesion between the CIGSe absorber layer and the Mo remains intact, the resistance of final devices with the Ni/CIGSe/Mo structure was found to be directly linked to the MoSe₂ thickness. Consequently, it addresses the importance of MoSe₂ structural properties for improved CIGSe solar cell performance and stability.

The critical impact of sodium-doped molybdenum (MoNa) in shaping the MoSe₂ interfacial layer, influencing the electrical properties of CIGSe/Mo heterostructures, and achieving optimal MoSe₂ formation conditions, leading to improved hetero-contact quality. Notably, samples with a 600-nm-thick MoNa layer demonstrate the highest resistivity (73 μΩcm) and sheet resistance (0.45 Ω/square), highlighting the substantial impact of MoNa layer thickness on electrical conductivity. Controlled sodium diffusion through MoNa layers is essential for achieving desirable electrical characteristics, influencing Na diffusion rates, grain sizes, and overall morphology, as elucidated by EDX and FESEM analyses. Additionally, XRD results provide insights into the spontaneous peeling-off phenomenon, with the sample featuring a ~ 600-nm MoNa layer displaying the strongest diffraction peak and the largest crystal size, indicative of enhanced Mo to MoSe₂ conversion facilitated by sodium presence. Raman spectra further confirm the presence of MoSe₂, with its thickness correlating with MoNa layer thickness. The observed increase in resistance and decrease in conductivity with rising MoSe₂ layer thickness underscore the critical importance of optimal MoSe₂ formation for transitioning from Schottky to ohmic contact in CIGSe/Mo heterostructures. Ultimately, significant factors to the advancement of CIGSe thin-film solar cell production are discussed, providing nuanced insights into the interplay of MoNa and MoSe₂, elucidating their collective impact on the electrical characteristics of CIGSe/Mo heterostructures. Graphical Abstract