Copper tin sulfide (Cu₂SnS₃) was a potential earth abundant absorber material for photovoltaic device application. In this contribution, triclinic Cu₂SnS₃ film with phase pure composition and large grain size was fabricated from a hydrazine solution process using Cu, Sn and S as the precursors. Absorption measurement revealed this Cu₂SnS₃ film had a direct optical band gap of 0.88 eV, and Hall effect measurement indicated the film was p-type with hole mobility of 0.86 cm²/Vs. Finally Mo/Cu₂SnS₃/CdS/ZnO/AZO/Au was produced and the best device efficiency achieved was 0.78%. Also, this device showed improved device performance during ambient storage. This study laid some foundation for the further improvement of Cu₂SnS₃ solar cell.

In recent years, rare-earth metals with triply oxidized state, lanthanide ions (Ln³⁺), have been demonstrated as dopants, which can efficiently improve the optical and electronic properties of metal halide perovskite materials. On the one hand, doping Ln³⁺ ions can convert near-infrared/ultraviolet light into visible light through the process of up-/down-conversion and then the absorption efficiency of solar spectrum by perovskite solar cells can be significantly increased, leading to high device power conversion efficiency. On the other hand, multi-color light emissions and white light emissions originated from perovskite nanocrystals can be realized via inserting Ln³⁺ ions into the perovskite crystal lattice, which functioned as quantum cutting. In addition, doping or co-doping Ln³⁺ ions in perovskite films or devices can effectively facilitate perovskite film growth, tailor the energy band alignment and passivate the defect states, resulting in improved charge carrier transport efficiency or reduced nonradiative recombination. Finally, Ln³⁺ ions have also been used in the fields of photodetectors and luminescent solar concentrators. These indicate the huge potential of rare-earth metals in improving the perovskite optoelectronic device performances.

As a typical wide bandgap semiconductor, ZnO has received a great deal of attention from researchers because of its strong physicochemical characteristics. During the past few years, great progress has been made in the optoelectronic applications of ZnO, particularly in the photocatalysis and photodetection fields. To enable further improvements in the material’s optoelectronic performance, construction of a variety of ZnO-based composite structures will be essential. In this paper, we review recent progress in the growth of different ZnO–graphene nanocomposite structures. The related band structures and photocatalysis and photoresponse properties of these nanocomposites are discussed. Additionally, specific examples of the materials are included to provide an insight into the common general physical properties and carrier transport characteristics involved in these unique nanocomposite structures. Finally, further directions for the development of ZnO–graphene nanocomposite materials are forecasted.

In this paper, laser surface treatment of Al alloy was studied by comparison of sandblasting and laser ablation. The effects of laser spot distribution on surface roughness, contact angle, chemical composition and shear strength of Al alloy were analyzed. The experimental results showed that the bonding performance of Al alloy are promoted by controlling the laser spot spacing. When laser spot spacing was smaller than the size of the laser spot, micro–nano composite structures were induced by multiple laser pulses, which would improve shear strength by increasing the contact area between Al alloy and adhesive. Using laser surface treatment, the adhesion properties on Al alloy can be promoted.