Recent achievements, based on lead (Pb) halide perovskites, have prompted comprehensive research on low-cost photovoltaics, in order to avoid the major challenges that arise in this respect: Stability and toxicity. In this study, device modelling of lead (Pb)-free perovskite solar cells has been carried out considering methyl ammonium tin bromide (CH₃NH₃SnBr₃) as perovskite absorber layer. The perovskite structure has been justified theoretically by Goldschmidt tolerance factor and the octahedral factor. Numerical modelling tools were used to investigate the effects of amphoteric defect and interface defect states on the photovoltaic parameters of CH₃NH₃SnBr₃-based perovskite solar cell. The study identifies the density of defect tolerance in the absorber layer, and that both the interfaces are 10¹⁵ cm⁻³, and 10¹⁴ cm⁻³, respectively. Furthermore, the simulation evaluates the influences of metal work function, uniform donor density in the electron transport layer and the impact of series resistance on the photovoltaic parameters of proposed n-TiO₂/i-CH₃NH₃SnBr₃/p-NiO solar cell. Considering all the optimization parameters, CH₃NH₃SnBr₃-based perovskite solar cell exhibits the highest efficiency of 21.66% with the V_oc of 0.80 V, J_sc of 31.88 mA/cm² and Fill Factor of 84.89%. These results divulge the development of environmentally friendly methyl ammonium tin bromide perovskite solar cell.

This research investigates the potential of Cd_1−xZn_xSe thin film for photovoltaic applications. The electrical behavior of CIGS based solar cell is examined with the novel Cd_1−xZn_xSe as buffer layer material by Solar Cell Capacitance Simulator (SCAPS). The tunability of Cd_1−xZn_xSe facilities to reduce the defects between absorber and buffer layer by determining the ideal conduction band offset. It is revealed that cross-over occurs between the p-type absorber and the metal back contact if the metal work function is below 4.6 eV. In this research, a thin PEDOT: PSS back surface (BSF) layer was integrated which enhances the device efficiency from 22.5 percent to 28.32% while retaining the metal work function at 5.1 eV. The trade-off between the use of metal having higher work function and inclusion of heavily doped BSF layer is one of the important findings of this research. These findings pave the way for Cd_1−xZn_xSe to be commercially used as a buffer layer material for CIGS solar cell.

1. The global rise in environmental awareness and the urgent need to combat climate change have propelled green building architecture to the forefront of sustainable development initiatives (Karimi...

This study systematically investigates the role of antisolvent engineering in tailoring the crystallographic and charge transport properties of Cs₃Bi₂I₉ thin films. Among various antisolvents tested, toluene demonstrated superior efficacy in controlling nucleation dynamics and film morphology. Optimization revealed that a 100 µL treatment produces highly crystalline films with a strong (006) orientation and a crystallite size of ~48.5 nm, effectively minimizing structural defects. These improvements resulted in a peak Hall mobility of 12.67 cm² V⁻¹ s⁻¹ and a significant reduction in Urbach energy to 0.76 eV, indicating fewer sub-bandgap defect states. To evaluate the photovoltaic potential of these optimized films, SCAPS-1D simulations were conducted comparing conventional planar (n-i-p) and inverted (p-i-n) device architectures. The simulation results demonstrate that the inverted structure (FTO/NiOₓ/Cs₃Bi₂I₉/PCBM/Ag) outperforms the planar configuration, achieving a superior open-circuit voltage (Voc) of ~1.30 V, a short-circuit current density (Jsc) of ~11.8 mA/cm², and an improved fill factor, driven by enhanced charge extraction and suppressed interfacial recombination. These results, driven by enhanced charge extraction and suppressed recombination, establish toluene-based antisolvent engineering as a vital strategy for developing efficient, stable, lead-free perovskite solar cells.

To cite this article: Rashid, M. J. et al. (2019). Simulation study of GaN/Al1-xGaxN quantum well (QW) operating in the UV region. J. Phys. Sci., 30(1), 25–32, https://doi.org/10.21315/jps2019.30.1.3 ABSTRACT This study describes the characteristics of GaN/Al1-xGaxN quantum well (QW) operating in the UV region by varying different parameters. It is well known that the spontaneous...