This manuscript for the first time presents the digital and analog/RF performance analysis for novel Tree-shaped Junctionless Nanosheet (NS) FET. An additional inter-bridge (IB) channel is added to the vertically stacked JL-NSFET to form a Tree-shaped structure. The Tree-shaped JL-NSFET is compared with the conventional JL-NSFET for $\textit{L}_{\textit{g}}$ $=$ 16 nm, $\textit{T}_{\text{NS}}$ $=$ 5 nm, $\textit{W}_{\text{NS}}$ $=$ 18 nm, $\textit{W}_{\text{IB}}$ $=$ 2 nm, and $\textit{H}_{\text{IB}}$ $=$ 6 nm. It is observed that ON-current ( $\textit{I}_{\biosc{on}}$ ) has been improved for Tree-shaped JL-NSFET by an amount of $\sim$ 15.3% with a decent subthreshold swing of 61.5 mV/dec. The analog/RF performance of the Tree-shaped JL-NSFET has been improved satisfactorily as compared to the conventional JL-NSFET. Further to enhance the digital/analog RF performance the $\textit{W}_{\text{IB}}$ is varied between 2–4 nm. The $\textit{I}_{\biosc{on}}$ is increased by an amount of $\sim$ 23.56% with the increase in $\textit{W}_{\text{IB}}$ due to the increase in effective width. However, the same resulted in the degradation of $\textit{A}_{\textit{V}}$ , GFP, $\textit{f}_{\textit{T}}$ , and $\textit{f}_{\text{MAX}}$ by an amount of $\sim$ 1.72%, $\sim$ 3.39%, $\sim$ 4.46%, and $\sim$ 8.39%, respectively, at 1-nA normalized drain current. Hence lower $\textit{W}_{\text{IB}}$ must be chosen for the improvement of analog/RF parameters. Furthermore, the effect of temperature (100–400 K) on Tree-shaped JL-NSFET is also investigated and the performance is best recorded at lower temperatures. At 1-nA normalized drain current, $\textit{g}_{\textit{m}}$ , $\textit{A}_{\textit{V}}$ , $\textit{f}_{\textit{T}}$ , $\textit{f}_{\text{MAX}}$ , and GFP are noticeably improved by an amount of $\sim$ 68.6%, $\sim$ 5.84%, $\sim$ 65.02%, $\sim$ 34.14%, and $\sim$ 56.02%, respectively. Moreover, the effect of IB height ( $\textit{H}_{\text{IB}}$ ) is explored (6–14 nm) and it is inferred that $\textit{H}_{\text{IB}}$ should be optimized to get better digital and analog/RF performances according to the application areas.