We describe a novel solid state crystallisation method for optimising a thin film transparent conductive oxide when deposited on flexible polymer substrates. The method is based on ultra-short non-thermal laser sintering of indium tin oxide (ITO) thin films. In this study, we used commercial ITO thin films deposited on a flexible polyethylene terephthalate substrate with a relatively low melting temperature compared with ITO on glass. We demonstrate the use of laser scanning with high pulse overlapping at fluences seven times less than the threshold required for melting/damage of ITO. The results confirm greater than four times enhancement in the mobility of charge carriers of ITO thin films after laser scanning and sheet resistance can be reduced up to 25%. There is no reduction in optical transparency observed in laser treated samples. Surface morphology and x-ray diffraction analyses confirm the improvement in crystallite sizes by laser sintering, resulting in a greater than 37% increase in grain size due to enhanced crystallization. Comparison of experimental and simulation based on a delayed two temperature model confirms that ITO thin film crystallization occurred at about one-third of the melting temperature of ITO.

The fabrication of low-cost and mechanically robust flexible electronic patterns has increasingly gained attention due to their growing applications in flexible displays, touch screen panels, medical devices, and solar cells. Such applications require cost-effective deposition of metals in a well-controlled manner potentially using nanoparticles (NPs). The presence of solvent and precursors in NP based inks impacts the electrical conductivity of the printed pattern and a post-processing heating step is typically performed to restore the electrical properties and structure of the material. We report printing with picolitre droplet volumes of silver (Ag) NPs on flexible substrates using an acoustic microdroplet dispenser. The low-cost, controlled deposition of Ag ink is performed at room temperature on photopaper, polyimide and clear polyimide substrates. A localized, ultrashort pulsed laser with minimal heat affected zone is employed to sinter printed Ag patterns. For comparison, oven sintering is performed, and the results are analysed with scanning electron microscopy, four-point probe and Hall measurements. The femtosecond laser sintering revealed highly organized, connected nanostructure that is not achievable with oven heating. A significant decrease in sheet resistance, up to 93% in Ag NPs on clear polyimide confirms the laser sintering improves the connectivity of the printed film and as a result, the electrical properties are enhanced. The surface morphology attained by the laser sintering process is interpreted to be due to a joining of NPs as a result of a solid-state diffusion process in the near surface region of NPs.

We propose a novel low temperature annealing method for selective crystallization of gold thin films. Our method is based on a non-melt process using highly overlapped ultrashort laser pulses at a fluence below the damage threshold. Three different wavelengths of a femtosecond laser with the fundamental (1030 nm), second (515 nm) and third (343 nm) harmonic are used to crystallize 18-nm and 39-nm thick room temperature deposited gold thin films on a quartz substrate. Comparison of laser wavelengths confirms that improvements in electrical conductivity up to 40% are achievable for 18-nm gold film when treated with the 515-nm laser, and the 343-nm laser was found to be more effective in crystallizing 39-nm gold films with 29% improvement in the crystallinity. A two-temperature model provides an insight into ultrashort laser interactions with gold thin films and predicts that applied fluence was insufficient to cause melting of gold films. The simulation results suggest that non-equilibrium energy transfer between electrons and lattice leads to a solid-state and melt-free crystallization process. The proposed low fluence femtosecond laser processing method offers a possible solution for a melt-free thin film crystallization for wide industrial applications.

Iron (Fe) targets are exposed to 100 pulses of Nd: YAG laser (532 nm, 6 ns, 10 Hz) at various fluences ranging from 4.8 to 38.5 J/cm². In order to explore the effect of background environment, targets have been exposed under vacuum as well as under five different pressures ranging from 5 to 100 Torr of various background gases like Ar, Ne, O₂, and air. The sputtering yield measurements and surface modifications of laser-ablated Fe are explored by quartz crystal microbalance (QCM) and scanning electron microscopy (SEM) analysis, respectively. QCM measurements reveal that the sputtering yield of Fe is strongly affected by laser fluence, pressure and nature of gas. By increasing laser fluence, the sputtering yield initially increases due to enhanced energy deposition and then saturates due to self-regulating regime. However, with increasing pressures of background gases, the sputtering yield of Fe initially increases and then decreases. Owing to thermal conductivity, ionization potential, and mass of background gas, the sputtering yield of Fe varies in accordance with the sequence vacuum >Ar>Ne>O₂> air. The SEM analysis reveals the formation of several features like laser-induced periodic surface structures, cones, cavities, channels, multiple ablative craters, and dot-like structures. The difference in the periodicity, size, and shape of features is explained on the basis of confinement and shielding effects of plasma and various energy deposition mechanisms. The surface profilometry analysis reveals that the crater depth increases with increasing the laser fluence in inert environments, while in case of reactive environments, it tends to decrease initially and afterwards it increases. X-ray diffraction and energy-dispersive X-ray analyses confirm the oxide formation in case of Fe treatment in O₂ and air; however, no additional phases are observed for Fe irradiation under inert environments.