The evaluation of heat production from gold nanoparticles (AuNPs) irradiated with radio-frequency (RF) energy has been problematic due to Joule heating of their background ionic buffer suspensions. Insights into the physical heating mechanism of nanomaterials under RF excitations must be obtained if they are to have applications in fields such as nanoparticle-targeted hyperthermia for cancer therapy. By developing a purification protocol that allows for highly stable and concentrated solutions of citrate-capped AuNPs to be suspended in high-resistivity water, we show herein, for the first time, that heat production is only evident for AuNPs of diameters ≤10 nm, indicating a unique size-dependent heating behavior not previously observed. Heat production has also shown to be linearly dependent on both AuNP concentration and total surface area and was severely attenuated upon AuNP aggregation. These relationships have been further validated using permittivity analysis across a frequency range of 10 MHz–3 GHz as well as static conductivity measurements. Theoretical evaluations suggest that the heating mechanism can be modeled by the electrophoretic oscillation of charged AuNPs across finite length scales in response to a time-varying electric field. It is anticipated these results will assist future development of nanoparticle-assisted heat production by RF fields for applications such as targeted cancer hyperthermia.

The behaviour of microcracks in silicon during thermal annealing has been studied using in situ X-ray diffraction imaging. Initial cracks are produced with an indenter at the edge of a conventional Si wafer, which was heated under temperature gradients to produce thermal stress. At temperatures where Si is still in the brittle regime, the strain may accumulate if a microcrack is pinned. If a critical value is exceeded either a new or a longer crack will be formed, which results with high probability in wafer breakage. The strain reduces most efficiently by forming (hhl) or (hkl) crack planes of high energy instead of the expected low-energy cleavage planes like {111}. Dangerous cracks, which become active during heat treatment and may shatter the whole wafer, can be identified from diffraction images simply by measuring the geometrical dimensions of the strain-related contrast around the crack tip. Once the plastic regime at higher temperature is reached, strain is reduced by generating dislocation loops and slip bands and no wafer breakage occurs. There is only a small temperature window within which crack propagation is possible during rapid annealing.

Copper (I) chloride (CuCl) is a potential candidate for ultraviolet (UV) optoelectronics due to its close lattice match with Si (mismatch less than 0.4%) and a high UV excitonic emission at room temperature. CuCl thin films were deposited using radio frequency magnetron sputtering technique. The influence of target to substrate distance $\left(d_{\mathrm{ts}}\right)$ and sputtering pressure on the composition, microstructure, and UV emission properties of the films were analyzed. The films deposited with shorter target to substrate spacing $(d_{\mathrm{ts}}=3\mathrm{cm})$ were found to be nonstoichiometric, and the film stoichiometry improves when the substrate is moved away from the target ($d_{\mathrm{ts}}=4.5$ and $6\mathrm{cm}$ ). A further increase in the spacing results in poor crystalline quality. The grain interface area increases when the sputtering pressure is increased from $1.1\times {10}^{-3}\text{to}1\times {10}^{-2}\mathrm{mbar}$ at $d_{\mathrm{ts}}=6\mathrm{cm}$ . Room temperature cathodoluminescence spectrum shows an intense and sharp UV exciton $\left(Z_3\right)$ emission at $\sim 385\mathrm{nm}$ with a full width at half maximum of $16\mathrm{nm}$ for the films deposited at the optimum $d_{\mathrm{ts}}$ of $6\mathrm{cm}$ and a pressure of $1.1\times {10}^{-3}\mathrm{mbar}$ . A broad deep level emission in the green region $(\sim 515\mathrm{nm})$ is also observed. The relative intensity of the UV to green emission peaks decreased when the sputtering pressure was increased, consistent with an increase in grain boundary area. The variation in the stoichiometry and the crystallinity are attributed to the change in the intensity and energy of the flux of materials from the target due to the interaction with the background gas molecules.

In this work, low temperature growth of GaAs epitaxial layers on Ge substrates by metalorganic vapor phase epitaxy has been studied. The experiments show that a growth temperature of 530°C and a V/III ratio of 3.5 result in smooth GaAs surfaces. Atomic force micrographs do not show any anti-phase boundaries on the surface of GaAs grown on a misoriented substrate. X-ray diffraction curves show that the layer tilt is reduced as the growth temperature is lowered. Synchrotron X-ray topography reveals very low threading dislocation densities of 300 cm^-2 for the GaAs epitaxial layers. Additionally, no misfit dislocations are observed. If a single layer is deposited at low temperature, secondary ion mass spectrometry shows a considerably reduced arsenic diffusion into Ge. When an additional layer is deposited at higher temperature on top of the initial low temperature layer, a substantial increase for the deep concentration-dependent arsenic diffusion is found.