Itir Koymen

Dr. Itir Koymen

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Representative Publications

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1 August 2011 in Microelectronic Engineering
Verified
Journal Article
Closed access
Damien ThuauDamien Thuau
Damien Thuau
IKItir Koymen
Itir Koymen
RCRebecca Cheung
Rebecca Cheung

14 November 2017 in IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
Verified
Journal Article
Closed access
HKHayrettin Köymen
Hayrettin Köymen
AAAbdullah Atalar
Abdullah Atalar
SGSaadettin Guler
Saadettin Guler
IKItir Koymen
Itir Koymen
ATA. Sinan Tasdelen
A. Sinan Tasdelen
AUAsli Unlugedik
Asli Unlugedik
An energy-consistent lumped-element equivalent circuit model for charged circular capacitive micromachined ultrasonic transducer (CMUT) cell is derived and presented. It is analytically shown and experimentally verified that a series dc voltage source at the electrical terminals is sufficient to model the charging in CMUT. A model-based method for determining this potential from impedance measurements at low bias voltages is presented. The model is validated experimentally using an airborne CMUT, which resonates at 103 kHz. Impedance measurements, reception measurements at resonance and off-resonance, and the transient response of the CMUT are compared with the model predictions.

6 August 2018 in Faraday Discussions
Verified
Journal Article
Closed access
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IKItir Koymen
Itir Koymen
PGPınar Aydoğan Göktürk
Pınar Aydoğan Göktürk
CKCoşkun Kocabaş
Coşkun Kocabaş
ŞSŞefik Süzer
Şefik Süzer
In situ measurements using XPS were performed on Pt/TiO 2 /TiO x /graphene structures to chemically address switching and hysteresis.

27 October 2025 in Nature Nanotechnology
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Journal Article
Open access
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Gianluca MilanoGianluca Milano
Gianluca Milano
XZXin Zheng
Xin Zheng
FMFabio Michieletti
Fabio Michieletti
GLGiuseppe Leonetti
Giuseppe Leonetti
GCGabriel Caballero
Gabriel Caballero
Ilia ValovIlia Valov
Ilia Valov
The recent revision of the International System of Units (SI)—which fixed the numerical values of nature’s fundamental constants—has opened new perspectives for practical realizations of SI units. Here we demonstrate an intrinsic resistance standard based on memristive nanoionic cells that operate in air at room temperature and are directly accessible to end users. By driving these devices into the quantum conductance regime and using an electrochemical-polishing-based programming strategy, we achieved quantum conductance levels that can be exploited as intrinsic standard values. An interlaboratory comparison confirmed metrological consistency, with deviations of –3.8% and 0.6% from the agreed SI values for the fundamental quantum of conductance, G 0 , and 2 G 0 , respectively. These results lay the groundwork for the implementation of national metrology institute services on chip and for the development of self-calibrating measurement systems with zero-chain traceability.

25 May 2018 in International Journal of Circuit Theory and Applications
Verified
Journal Article
Open access
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IKItir Koymen
Itir Koymen
EDEmm. Mic. Drakakis
Emm. Mic. Drakakis
Summary: The comparison of the memristor to the biological synapse has motivated the introduction of memristors to biomimetic circuits such as Central Pattern Generators (CPGs) and Half Center Oscillators (HCOs). The effects of the utilization of memristors in such systems have been investigated in this work. The HCO is a neural oscillator, and the CPG is made up of 4 HCOs producing oscillations corresponding to the locomotion of a 4‐limbed animal. Analog HCO and CPG circuits have been simulated using the Cadence Virtuoso platform and effects of using current‐driven and voltage‐driven memristors in different configurations with different parameters have been analyzed. Improvement in the stability of rhythm and variations in oscillation amplitudes have been observed.

1 May 2015
Verified
Conference Paper
Closed access
PGPanayiotis S. Georgiou
Panayiotis S. Georgiou
IKItir Koymen
Itir Koymen
EDEmm. Mic. Drakakis
Emm. Mic. Drakakis
This work investigates how the presence of thermal noise influences the response of simple networks incorporating an ideal memristor. First we study how a single noiseless memristor modulates noise at its input and how it manifests at its output. Then we extend our analysis to a generic resistor-memristor and capacitor-memristor network. The results reported are based on strong assumptions regarding the type of noise and the instantaneous linearity of the memristor networks, and should be viewed only as trend indicators.