Excitonic interband optical transitions within single InAs self-assembled quantum dots have been directly observed in a transmission experiment at 4.2 K. Using Stark shift, the excitonic energy levels of a single quantum dot are tuned into resonance with a narrow-band laser line. The Stark shift is also modulated at low frequencies. Relative changes in transmission can be detected this way down to one part per million. The oscillator strength as well the homogeneous linewidth of the transition is obtained.

We have studied the emission and absorption properties of type II $\mathrm{Ga}\mathrm{Sb}∕\mathrm{Ga}\mathrm{As}$ quantum dots embedded in a $p\text{-}i\text{-}n$ photodiode. The excitation power evolution provides clear signatures of the spatially separated confinement of electrons and holes in these nanostructures. We have estimated the confinement potential for the holes to be $\sim 500\mathrm{meV}$ , leading to an intense room temperature emission assisted by recapture processes from the wetting layer. Photocurrent measurements show strong absorption in the wetting layer and in the quantum dots at room temperature which are important for photodetection applications based in this system.

Zinc oxide (ZnO) films have been grown on gold (111) by electrodeposition using two different OH− sources, nitrate and peroxide, in order to obtain a comparative study between them. The morphology, structural and optical characterization of the films were investigated depending on the solution used (nitrate and peroxide) and the applied potential. Scanning electron microscopy pictures show different morphologies in each case. X-ray diffraction confirms that the films are pure ZnO oriented along the (0002) direction. ZnO films have been studied by photoluminescence to identify the emission of defects in the visible range. A consistent model that explains the emissions for the different electrodeposited ZnO films is proposed. We have associated the green and yellow emissions to a transition from the donor OH− to the acceptor zinc vacancies (VZn−) and to interstitial oxygen (Oi0), respectively. The orange-red emission is probably due to transitions from the conducting band to Oi− and OZn0 defects and the infrared emission to transition from these Oi−/2− and OZn0/− defects to the valence band.

We have carried out continuous wave and time resolved photoluminescence experiments in self-assembled In(Ga)As quantum dots and quantum rings embedded in field effect structure devices. In both kinds of nanostructures, we find a noticeable increase of the exciton radiative lifetime with the external voltage bias that must be attributed to the field-induced polarizability of the confined electron hole pair. The interplay between the exciton radiative recombination and the electronic carrier tunneling in the presence of a stationary electric field is therefore investigated and compared with a numerical calculation based on the effective mass approximation.

InAs self-assembled quantum wire structures have been grown on InP substrates and studied by means of photoluminescence and polarized-light absorption measurements. According to our calculations, the observed optical transitions in each sample are consistent with wires of different heights, namely from 6 to 13 monolayers. The nonradiative mechanism limiting the emission intensity at room temperature is related to thermal escape of carriers out of the wires.