David L. Sales

Dr. David L. Sales

Universidad de Cádiz, Spain
orcid
Associate Proffessor @ University of Cadiz (Spain)

Research Focus & Metrics

Academic Career Length

21Years (2006-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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28 September 2009 in Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences
Verified
Journal Article
Closed access
SPStephen J. Pennycook
Stephen J. Pennycook
MCM. F. Chisholm
M. F. Chisholm
ALAndrew R Lupini
Andrew R Lupini
MVM. Varela
M. Varela
ABA. Y. Borisevich
A. Y. Borisevich
SPS. T. Pantelides
S. T. Pantelides
The new possibilities of aberration-corrected scanning transmission electron microscopy (STEM) extend far beyond the factor of 2 or more in lateral resolution that was the original motivation. The smaller probe also gives enhanced single atom sensitivity, both for imaging and for spectroscopy, enabling light elements to be detected in a Z-contrast image and giving much improved phase contrast imaging using the bright field detector with pixel-by-pixel correlation with the Z-contrast image. Furthermore, the increased probe-forming aperture brings significant depth sensitivity and the possibility of optical sectioning to extract information in three dimensions. This paper reviews these recent advances with reference to several applications of relevance to energy, the origin of the low-temperature catalytic activity of nanophase Au, the nucleation and growth of semiconducting nanowires, and the origin of the eight orders of magnitude increased ionic conductivity in oxide superlattices. Possible future directions of aberration-corrected STEM for solving energy problems are outlined.

1 January 2009 in Ultramicroscopy
Verified
Journal Article
Closed access
Sergio I MolinaSergio I Molina
Sergio I Molina
David L. SalesDavid L. Sales
David L. Sales
PGPedro L Galindo
Pedro L Galindo
DFDavid Fuster
David Fuster
YGY. González
Y. González
SPS.J. Pennycook
S.J. Pennycook

13 January 2014 in Discover Nano
Verified
Journal Article
Open access
PDF file
DDaniel Fernández
Daniel Fernández
FBFaebian Bastiman
Faebian Bastiman
CHChris J Hunter
Chris J Hunter
David L. SalesDavid L. Sales
David L. Sales
ASAna M Sanchez
Ana M Sanchez
DRDavid González Robledo
David González Robledo
The structure and composition of single GaAsBi/GaAs epilayers grown by molecular beam epitaxy were investigated by optical and transmission electron microscopy techniques. Firstly, the GaAsBi layers exhibit two distinct regions and a varying Bi composition profile in the growth direction. In the lower (25 nm) region, the Bi content decays exponentially from an initial maximum value, while the upper region comprises an almost constant Bi content until the end of the layer. Secondly, despite the relatively low Bi content, CuPtB-type ordering was observed both in electron diffraction patterns and in fast Fourier transform reconstructions from high-resolution transmission electron microscopy images. The estimation of the long-range ordering parameter and the development of ordering maps by using geometrical phase algorithms indicate a direct connection between the solubility of Bi and the amount of ordering. The occurrence of both phase separation and atomic ordering has a significant effect on the optical properties of these layers.

17 December 2007 in Applied Physics Letters
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Journal Article
Closed access
PDF file
MHMohamed Henini
Mohamed Henini
Jordi Ibanez-InsaJordi Ibanez-Insa
Jordi Ibanez-Insa
MSM. Schmidbauer
M. Schmidbauer
MSM. Shafi
M. Shafi
SNS. V. Novikov
S. V. Novikov
JMJ. Misiewicz
J. Misiewicz
We report the growth by molecular beam epitaxy of GaBixAs1−x epilayers on (311)B GaAs substrates. We use high-resolution x-ray diffraction (HRXRD), transmission electron microscopy, and Z -contrast imaging to characterize the structural properties of the as-grown material. We find that the incorporation of Bi into the GaBiAs alloy, as determined by HRXRD, is sizably larger in the (311)B epilayers than in (001) epilayers, giving rise to reduced band-gap energies as obtained by optical transmission spectroscopy.

1 May 2023 in Polymers
Verified
Journal Article
Open access
PDF file
SBSaltanat Bergaliyeva
Saltanat Bergaliyeva
David L. SalesDavid L. Sales
David L. Sales
FDFrancisco J. Delgado
Francisco J. Delgado
SBSaltanat Bolegenova
Saltanat Bolegenova
Sergio I MolinaSergio I Molina
Sergio I Molina
This paper studies the thermal, morphological, and mechanical properties of 3D-printed polylactic acid (PLA) blends of virgin and recycled material in the following proportions: 100/0, 25/75, 50/50, and 75/25, respectively. Real waste, used as recycled content, was shredded and sorted by size without a washing step. Regular dog-bone specimens were 3D printed from filaments, manufactured in a single screw extruder. Thermogravimetric analysis indicated that adding PLA debris to raw material did not significantly impact the thermal stability of the 3D-printed samples and showed that virgin and recycled PLA degraded at almost the same temperature. Differential scanning calorimetry revealed a significant reduction in crystallinity with increasing recycled content. Scanning electron microscopy showed a more homogenous structure for specimens from 100% pure PLA, as well as a more heterogeneous one for PLA blends. The tensile strength of the PLA blends increased by adding more recycled material, from 44.20 ± 2.18 MPa for primary PLA to 52.61 ± 2.28 MPa for the blend with the highest secondary PLA content. However, this study suggests that the mechanical properties of the reprocessed parts and their basic association are unique compared with those made up of virgin material.

13 October 2008 in Applied Physics Letters
Verified
Journal Article
Closed access
PDF file
JPJ. Pizarro
J. Pizarro
PGPedro L Galindo
Pedro L Galindo
EGElisa Guerrero
Elisa Guerrero
AYA. Yáñez
A. Yáñez
MGM. P. Guerrero
M. P. Guerrero
Sergio I MolinaSergio I Molina
Sergio I Molina
High angle annular dark field scanning transmission electron microscopy (HAADF-STEM) is a powerful tool to quantify size, shape, position, and composition of nano-objects with the assessment of image simulation. Due to the high computational requirements needed, nowadays it can only be applied to a few unit cells in standard computers. To overpass this limitation, a parallel software (SICSTEM) has been developed. This software can afford HAADF-STEM image simulations of nanostructures composed of several hundred thousand atoms in manageable time. The usefulness of this tool is exemplified by simulating a HAADF-STEM image of an InAs nanowire.