Background: In 2021, the Korean government proposed a new CT diagnostic reference level. This study performed a nationwide survey and developed new DRLs and AD for 13 common CT examinations. We compared other countries’ DRLs for CT examinations. Methods: This study investigated the CTDI_vol and DLP of the 12 types of CT protocols for adults and brain CT protocol for pediatrics. A total of 7829 CT examinations were performed using 225 scanners. We defined the DRLs values in the distribution of radiation exposure levels to determine the nationwide patient dose and distribution status of the dose. Results: This study showed that the new Korean national CT DRLs are slightly higher or similar to those of previous surveys and are similar or lower than those of other countries. In some protocols, although the DLP value increased, the CTDI_vol decreased; therefore, it can be concluded that the patient’s dose in CT examinations was well managed. Conclusions: The new CT DRLs were slightly higher than or similar to that of the previous survey and were evaluated to be similar or lower than CT DRLs of other countries. These DRLs will be used for radiation optimization and effective dose calculation for an individual.

Digital radiography is often performed at a higher dose rate than analogue radiography for image acquisition. The authors measured the Entrance Surface Dose (ESD) of analogue and digital radiography techniques for 14 radiographic examinations from randomly selected medical centres in the central district of Korea. It was that the mean ESD of the digital examinations was 2.84 mGy (range, 0.37–6.38 mGy) and that of the analogue examinations was 1.83 mGy (range, 0.38–4.74 mGy), resulting in a 55.25 % higher ESD for digital technique. Although this survey is not completely representative of Korea, findings of this study indicate a need for closer exposure management in digital radiography to minimise patient dose.

In radiography, the exposure index (EI), as per the International Electrotechnical Commission standard, depends on the incident beam quality and exposure dose to the digital radiography system. Today automatic exposure control (AEC) systems are commonly employed to obtain the optimal image quality. An AEC system can maintain a constant incident exposure dose on the image receptor regardless of the patient thickness. In this study, we investigated the relationship between body thickness, entrance surface dose (ESD), EI, and the exposure indicator (S value) with the aim of using EI as the dose optimization tool in digital chest radiography (posterior–anterior and lateral projection). The exposure condition from the Korean national survey for determining diagnostic reference levels and two digital radiography systems (photostimulable phosphor plate and indirect flat panel detector) were used. As a result, ESD increased as the phantom became thicker with constant exposure indicator, which indicates similar settings to an AEC system, but the EI indicated comparatively constant values without following the tendency of ESD. Therefore, body thickness should be considered under the AEC system for introducing EI as the dose optimization tool in digital chest radiography.

The presence of Te secondary-phase defects (i.e., Te inclusions and Te precipitates) is a major factor limiting the performance of CdZnTe (CZT) X-ray and gamma-ray radiation detectors. We find that Te secondary-phase defects in CZT crystals can be removed through postgrowth two-step annealing without creating new trapping centers (i.e., prismatic punching defects). Two-step annealing (with the first under a Cd pressure and the second one under a Te pressure) was demonstrated to be effective in removing the Te secondary-phase defects, while preserving the electrical resistivity of the CZT detector. The first step involves annealing of semi-insulating CZT under a Cd overpressure at 700 °C/600 °C (CZT/Cd) for 24 h, which completely eliminated the Te-rich secondary-phase defects (Te inclusions). However, it resulted in a lower resistivity of the samples (down to $2\times 10^{4-6}\,\,\Omega \cdot \text {cm}$ ). A subsequent annealing step involves processing CZT under a Te ambient condition at 540 °C/380 °C (CZT/Te) for 120 h, which restored the crystal’s resistivity to $6.4 \times 10^{10}\,\,\Omega \cdot \text {cm}$ without creating new Te secondary-phase defects. However, Te inclusions reappeared in the case of unnecessarily long Te ambient annealing. Pulse-height spectra taken with the two-step annealed CZT detectors showed an improved detector performance due to a reduced concentration and the size of Te secondary-phase defects.