Magnetoelectric (ME) thin film composites consisting of sputtered piezoelectric (PE) and magnetostrictive (MS) layers enable for measurements of magnetic fields passively, i.e. an AC magnetic field directly generates an ME voltage by mechanical coupling of the MS deformation to the PE phase. In order to achieve high field sensitivities a magnetic bias field is necessary to operate at the maximum piezomagnetic coefficient of the MS phase, harnessing mechanical resonances further enhances this direct ME effect size. Despite being able to detect very small AC field amplitudes, exploiting mechanical resonances directly, implies a limitation to available signal bandwidth along with the inherent inability to detect DC or very low frequency magnetic fields. The presented work demonstrates converse ME modulation of thin film Si cantilever composites of mesoscopic dimensions (25 mm × 2.45 mm × 0.35 mm), employing piezoelectric AlN and magnetostrictive FeCoSiB films of 2 µm thickness each. A high frequency mechanical resonance at about 515 kHz leads to strong induced voltages in a surrounding pickup coil with matched self-resonance, leading to field sensitivities up to 64 kV/T. A DC limit of detection of 210 pT/Hz^1/2 as well as about 70 pT/Hz^1/2 at 10 Hz, without the need for a magnetic bias field, pave the way towards biomagnetic applications.

High sensitivity magnetoelectric (ME) thin film composite sensors, which enable the detection of picotesla magnetic fields, are improved in terms of magnetic noise performance by the elimination of magnetic domain (MD) activity. Using an antiparallel (AP) exchange biasing scheme, suppression of magnetic noise is obtained. Postsetting of AP biased ferromagnetic/antiferromagnetic multilayers is accomplished by magnetic field free annealing with in-situ MD control. Overcoming the shape and demagnetization effects, stable single MD configurations in the magnetic sensing layers of magnetic multilayers are formed. Magnetic noise contributions are undetectable. The achieved single domain field stability opens the path to ultralow noise ME sensor applications. The demonstrated AP biasing scheme is applicable to other magnetic layer-based field sensing devices.