With experimental and numerical simulation, we report the origin of the performance enhancement in p-type SnO thin-film transistors (TFTs) due to fluorine plasma treatment (FPT). To study the effect of fluorination, using the reactive-ion-etching process, the devices are treated at various plasma powers upto 60 W. It is observed, through X-ray photoelectron spectroscopy and XRD measurements, that the plasma fluorination modifies the defect/trap states of SnO channel and SnO/HfO ₂ interface. These effects are introduced through density of state (DOS) model for SnO in numerical simulations, to understand the routes of electrical performance improvement. It is observed that the attributes of donor-like band-tail state and acceptor-like Gaussian defect states (Sn vacancies) are modified in overall DOS due to plasma fluorination. The treated device shows excellent electrical performances with high ${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$ ratio of ~10 ⁷ and low substhreshold swing of ~ 100 mV/dec and field-effect mobility ( $\mu _{\text {FE}}$ ) of 2.13 cm ² V ⁻¹ s ⁻¹ .

Metal–insulator–metal (MIM) capacitors are inevitable and critical passive components in analog, mixed-signal, and memory applications. These capacitors occupy nearly 40% of circuit area among other passive and active components of the integrated circuit (IC). Considering this fact, the International Roadmap for Devices and Systems (IRDS) recognized and recommended the miniaturization of MIM capacitors with high permittivity dielectric materials. For future analog and radio frequency (RF) applications, the IRDS has predicted that MIM capacitors should hold a high capacitance density of $>$ $\text{10}$ $\text{fF}/\mu \text{m}^{\text{2}}$ , a low voltage linearity of $<$ $\text{100}$ $\text{ppm}/\text{V}^{\text{2}}$ , and a low leakage current density of $<$ $\text{10}$ $\text{nA}/\text{cm}^{\text{2}}$ . In this regard, many research works have been carried out over the last few decades with various high-k dielectrics to achieve “low voltage linearity.” However, many of them are facing problems with structural defects, interface traps, and poor polarization process due to limitations of fabrication processes. This article attempts to review the challenges and opportunities involved in the reduction of voltage linearity and leakage of MIM capacitors. Also, this article presents the physical limits and challenges involved in MIM capacitor integration with back end of line (BEOL) process of recent complementary metal–oxide–semiconductor (CMOS) technologies. Using physical modeling, the design formula for low voltage linearity coefficient was derived, which helps IC developers in the design and implementation of highly linear RF-analog and mixed-signal (AMS) systems.

Origin of wideband nature and radiation behavior in many broadband antenna structures is not clearly understood. In this article, we have attempted to clarify those phenomena using characteristic mode (CM) analysis along with equivalent circuit (EC) modeling. By modeling the modal impedance of antenna for a large bandwidth, considering natural resonances and anti-resonances, the EC models are developed for various wideband antennas. It is observed that the reactive loading and resonant mode coupling effects are largely contributing in the formation of wideband and far fields of antenna. These models can be used in SPICE simulators to study the effective communication between wireless transmitter and receiver systems without an EM solver. A novel design method is proposed on the development of wideband antennas using a modal impedance model and coupled mode theory of resonant modes. This method yields accurate design to achieve desired center frequency and bandwidth using structural modifications.