In the present work, we have investigated an organic semiconductor based on tris(8-hydroxyquinoline) aluminum (AlQ₃) doped with tetracyanoquinodimethane (TCNQ), which can be used as an organic photoconductor. DFT calculations were carried out to optimize the structure of semiconductor species and to obtain related constants in order to compare experimental and theoretical results. Subsequently, AlQ₃-TCNQ films with polypyrrole (Ppy) matrix were fabricated, and they were morphologically and mechanically characterized by Scanning Electron Microscopy, X-ray diffraction and Atomic Force Microscopy techniques. The maximum stress for the film is 8.66 MPa, and the Knoop hardness is 0.0311. The optical behavior of the film was also analyzed, and the optical properties were found to exhibit two indirect transitions at 2.58 and 3.06 eV. Additionally, photoluminescence measurements were carried out and the film showed an intense visible emission in the visible region. Finally, a photoconductor was fabricated and electrically characterized. Applying a cubic spline approximation to fit cubic polynomials to the J-V curves, the ohmic to SCLC transition voltage $V_{\mathrm{ON}}$ and the trap-filled-limit voltage $V_{\mathrm{TFL}}$ for the device were obtained. Then, the free carrier density and trap density for the device were approximated to $n_0=4.4586\times {10}^{19}\frac{1}{{\mathrm{m}}^3}$ and $N_t=3.1333\times {10}^{31}\frac{1}{{\mathrm{m}}^3}$, respectively.

In this study, we assessed the electrical and optical behavior of semiconductor hybrid films fabricated from octaethyl-21H,23H-porphine copper (CuP), embedded in polymethylmethacrylate (PMMA), and polystyrene (PS). The hybrid films were characterized structurally and morphologically using infrared spectroscopy (IR), atomic force microscopy (AFM), scanning electron microscopy (SEM), and X-ray diffraction (XRD). Subsequently, the PMMA:CuP and PS:CuP hybrid films were evaluated optically by UV–vis spectroscopy, as well as electrically, with the four-point collinear method. Hybrid films present a homogeneous and low roughness morphology. In addition, the PS matrix allows the crystallization of the porphin, while PMMA promotes the amorphous structure in CuP. The polymeric matrix also affects the optical behavior of the films, since the smallest optical gap (2.16 eV) and onset gap (1.89 eV), and the highest transparency are obtained in the film with a PMMA matrix. Finally, the electrical behavior in hybrid films is also affected by the matrix: the largest amount of current carried is approximately 0.01 A for the PS:CuP film, and 0.0015 A for the PMMA:CuP film. Thanks to the above properties, hybrid films are promising candidates for use in optoelectronic devices.

In this study we assessed the electrical and optical behavior of semiconductor hybrid films fabricate from octaethyl-21H,23H-porphine copper (CuP), embedded in polymethylmethacrylate (PMMA), and polystyrene (PS). The hybrid films were characterized structurally and morphologically by means of Infrared spectroscopy (IR), atomic force microscopy (AFM), scanning electron microscopy (SEM) and X-ray diffraction (XRD). Subsequently, the PMMA:CuP and PS:CuP hybrid films were evaluated optically by UV-vis spectroscopy, as well as electrically, with the four-point collinear method. Hybrid films present a homogeneous and low roughness morphology, besides; the PS matrix allows the crystallization of the porphin, while the PMMA promotes the amorphous structure in CuP. The polymeric matrix also has an effect on the optical behavior of the films, since the smallest optical gap (2.16 eV) and onset gap (1.89 eV) and the highest transparency are obtained in the film with a PMMA matrix. Finally, the electrical behavior in hybrid films is also affected by the matrix: the largest amount of current carried is around 0.01 A for PS:CuP film, while for PMMA:CuP film it is 0.0015 A. Thanks to the above properties, hybrid films are promising candidates for use in optoelectronic devices.

The role of alloying elements such as Cr, Mo and Mn on low-alloy 8620 steel during hot forging operations is not yet clear, as, during deformation in the 1000~1100 °C temperature range, the austenite grain size remains small, ensuring the capacity of the forged part to be subsequently modified by surface hardening procedures. This work analyzed a deformed bar considering hardness at different geometry zones, along with SEM and TEM microstructures of previous austenite grains and lamellar martensite spacing. Moreover, Thermocalc simulations of M₇C₃, M₂₃C₆ and MnS precipitation were combined with Design of Experiments (DOE) in order to detect the sensitivity and significant variables. The values of the alloying elements’ percentages were drastically modified, as nominal values did not produce precipitation, and segregation at the austenite matrix may have been responsible for short-term, nanometric precipitates producing grain growth inhibition.