Optically addressable high-spin states (S ≥ 1) of defects in semiconductors are the basis for the development of solid-state quantum technologies. Recently, one such defect has been found in hexagonal boron nitride (hBN) and identified as a negatively charged boron vacancy (${\mathrm{V}}_{\mathrm{B}}^{-}$). To explore and utilize the properties of this defect, one needs to design a robust way for its creation in an hBN crystal. We investigate the possibility of creating ${\mathrm{V}}_{\mathrm{B}}^{-}$ centers in an hBN single crystal by means of irradiation with a high-energy (E = 2 MeV) electron flux. Optical excitation of the irradiated sample induces fluorescence in the near-infrared range together with the electron spin resonance (ESR) spectrum of the triplet centers with a zero-field splitting value of D = 3.6 GHz, manifesting an optically induced population inversion of the ground state spin sublevels. These observations are the signatures of the ${\mathrm{V}}_{\mathrm{B}}^{-}$ centers and demonstrate that electron irradiation can be reliably used to create these centers in hBN. Exploration of the ${\mathrm{V}}_{\mathrm{B}}^{-}$ spin resonance line shape allowed us to establish the source of the line broadening, which occurs due to the slight deviation in orientation of the two-dimensional B-N atomic plains being exactly parallel relative to each other. The results of the analysis of the broadening mechanism can be used for the crystalline quality control of the 2D materials, using the ${\mathrm{V}}_{\mathrm{B}}^{-}$ spin embedded in the hBN as a probe.

Bioactive manganese (Mn)-doped ceramic coatings for intraosseous titanium (Ti) implants are developed. Arc plasma deposition procedure is used for coatings preparation. X-ray Diffraction, Scanning Electron Microscopy-Energy Dispersive X-ray Spectroscopy, and Electron Paramagnetic Resonance (EPR) methods are applied for coatings characterization. The coatings are homogeneous, composed of the main phase α-tricalcium phosphate (α-TCP) (about 67%) and the minor phase hydroxyapatite (about 33%), and the Mn content is 2.3 wt%. EPR spectroscopy demonstrates that the Mn ions are incorporated in the TCP structure and are present in the coating in Mn²⁺ and Mn³⁺ oxidation states, being aggregated in clusters. The wetting contact angle of the deposited coatings is suitable for cells’ adhesion and proliferation. In vitro soaking in physiological solution for 90 days leads to a drastic change in phase composition; the transformation into calcium carbonate and octacalcium phosphate takes place, and no more Mn is present. The absence of antibacterial activity against Escherichia coli, Enterococcus faecalis, and Pseudomonas aeruginosa bacteria strains is observed. A study of the metabolic activity of mouse fibroblasts of the NCTC L929 cell line on the coatings using the MTT (dye compound 3-(4,5-Dimethylthiazol-2-yl)-2,5-diphenyltetrazolium bromide) test demonstrates that there is no toxic effect on the cell culture. Moreover, the coating material supports the adhesion and proliferation of the cells. A good adhesion, spreading, and proliferative activity of the human tooth postnatal dental pulp stem cells (DPSC) is demonstrated. The developed coatings are promising for implant application in orthopedics and dentistry.

Mesoporous hydroxyapatite (HA) and iron(III)-doped HA (Fe-HA) are attractive materials for biomedical, catalytic, and environmental applications. In the present study, the nanopowders of HA and Fe-HA with a specific surface area up to 194.5 m²/g were synthesized by a simple precipitation route using iron oxalate as a source of Fe³⁺ cations. The influence of Fe³⁺ amount on the phase composition, powders morphology, Brunauer–Emmett–Teller (BET) specific surface area (S), and pore size distribution were investigated, as well as electron paramagnetic resonance and Mössbauer spectroscopy analysis were performed. According to obtained data, the Fe³⁺ ions were incorporated in the HA lattice, and also amorphous Fe oxides were formed contributed to the gradual increase in the S and pore volume of the powders. The Density Functional Theory calculations supported these findings and revealed Fe³⁺ inclusion in the crystalline region with the hybridization among Fe-3d and O-2p orbitals and a partly covalent bond formation, whilst the inclusion of Fe oxides assumed crystallinity damage and rather occurred in amorphous regions of HA nanomaterial. In vitro tests based on the MG-63 cell line demonstrated that the introduction of Fe³⁺ does not cause cytotoxicity and led to the enhanced cytocompatibility of HA.

Optically addressable spin-triplet defects in silicon carbide, such as divacancies and negatively charged nitrogen vacancy $\left({\mathrm{NV}}^{-}\right)$ allow to develop modern quantum technologies operating in the near-infrared range based on the well-developed semiconductor material. Here, by means of both high-frequency (94 GHz) pulsed electron paramagnetic resonance (EPR) and electron-nuclear double Rresonance (ENDOR) techniques the ground state properties of the negatively charged ${\mathrm{NV}}^{-}$ defect in $4H$-SiC were studied. We experimentally determined the ordering of the ground state spin sublevels and established the sign of the zero-field splitting to be positive as predicted by theory. Analysis of nuclear magnetic resonance transitions in ENDOR spectra allowed to determine the sign, symmetry, and absolute values of the hyperfine interaction of the ${\mathrm{NV}}^{-}$ defect electron spin with ${}^{14}\mathrm{N}$ nuclear spin as ${\mathit{A}}_{\parallel }=-1.142\mathrm{MHz}$ and ${\mathit{A}}_{\perp }=-1.184\mathrm{MHz}$. The absolute value of the nuclear quadrupole interaction constant reflecting an interaction between the ${}^{14}\mathrm{N}$ nuclear electric quadrupole moment with the electric field gradient was determined to be $|{\mathit{C}}_q|=2.44\mathrm{MHz}$. This large value is compatible with a threefold coordinated ${}^{14}\mathrm{N}$ nucleus with uniaxial symmetry and proves conclusively the existence of a nearestneighbor ${\mathrm{N}}_{\mathrm{C}}{\mathrm{V}}_{\mathrm{Si}}$ pair in the material. For this ${\mathrm{NV}}^{-}$ defect, an ensemble (Hahn-echo) coherence time of ${\mathit{T}}_{\text{2}}=49\mu \mathrm{s}$ was measured, a value which is in the range previously reported for silicon vacancy spin ensembles and slightly longer than ${\mathit{T}}_{\text{2}}=40\mu \mathrm{s}$ measured here on the divacancy spin ensemble.