We introduce an energy resolved electrochemical impedance spectroscopy method to map the electronic density of states (DOS) in organic semiconductor materials. The method consists in measurement of the charge transfer resistance of a semiconductor/electrolyte interface at a frequency where the redox reactions determine the real component of the impedance. The charge transfer resistance value provides direct information about the electronic DOS at the energy given by the electrochemical potential of the electrolyte, which can be adjusted using an external voltage. A simple theory for experimental data evaluation is proposed, along with an explanation of the corresponding experimental conditions. The method allows mapping over unprecedentedly wide energy and DOS ranges. Also, important DOS parameters can be determined directly from the raw experimental data without the lengthy analysis required in other techniques. The potential of the proposed method is illustrated by tracing weak bond defect states induced by ultraviolet treatment above the highest occupied molecular orbital in a prototypical σ-conjugated polymer, poly[methyl(phenyl)silylene]. The results agree well with those of our previous DOS reconstruction by post-transient space-charge-limited-current spectroscopy, which was, however, limited to a narrow energy range. In addition, good agreement of the DOS values measured on two common π-conjugated organic polymer semiconductors, polyphenylene vinylene and poly(3-hexylthiophene), with the rather rare previously published data demonstrate the accuracy of the proposed method.

There is potential in applying conjugated polymers in novel organic optoelectronic devices, where a comprehensive understanding of the fundamental processes and energetics involved during transport and recombination is still lacking, limiting further device optimization. The electronic transport modeling and its optimization need the energy distribution of transport and defect states, expressed by the energy distribution of the Density of States (DOS) function, as input/comparative parameters. We present the Energy Resolved-Electrochemical Impedance Spectroscopy (ER-EIS) method for the study of transport and defect electronic states in organic materials. The method allows mapping over unprecedentedly wide energy and DOS ranges. The ER-EIS spectroscopic method is based on the small signal interaction between the surface of the organic film and the liquid electrolyte containing reduction-oxidation (redox) species, which is similar to the extraction of an electron by an acceptor and capture of an electron by a donor at a semiconductor surface. The desired DOS of electronic transport and defect states can be derived directly from the measured redox response signal to the small voltage perturbation at the instantaneous position of the Fermi energy, given by the externally applied voltage. The theory of the ER-EIS method and conditions for its validity for solid polymers are presented in detail. We choose four case studies on poly(3-hexylthiophene-2,5-diyl) and poly[methyl(phenyl)silane] to show the possibilities of the method to investigate the electronic structure expressed by DOS of polymers with a high resolution of about 6 orders of magnitude and in a wide energy range of 6 eV.

The authors report on a metastable defect observed in pentacene thin films. The defect, which is characterized by a hole trap at Ev+0.6eV and attempt-to-escape frequency of 5×1012s−1, can be reversibly created/removed under a negative/positive bias voltage applied to the aluminum/pentacene Schottky diode at room temperature in air. Annealing the sample in vacuum at 360K removes the defect and prevents its creation by application of any bias voltage in vacuum. Considering recent calculations of defects in pentacene the authors assume that the defect is formed by replacing one of the hydrogen atoms by an oxygen atom (C22H13O).

A series of ten 2-naphthyl and 2-anthrylbithiophene derivatives with electron acceptor groups were synthesised using the Negishi or Suzuki cross-coupling reaction as a key step. We present a comparison of theoretical and experimental values of the LUMO and gap energies of these derivatives and the effect of the various electron-withdrawing groups on their optical and electrochemical properties. DFT-calculated frontier orbital energy differences have shown a trend following the experimentally determined values. The participation of the electron-withdrawing group in π-conjugation decreases the LUMO level and narrows the energy gap in the order of perfluoroalkyl, acyl, perfluoroacyl, nitro ≈ dicyanovinyl in both series. TD-DFT calculations allowed better understanding of electronic transitions. X-ray structure analysis of naphthalene hexanoyl and perfluorooctanoyl derivatives revealed their herringbone or sandwich herringbone molecular packing, respectively, having a planar naphthalene-bithiophene moiety with opposite (s-trans vs. s-cis) conformation of bithiophene.