Tungsten oxide (WO₃) is a wide band gap semiconductor with unintentionally n−doping performance, excellent conductivity, and high electron hall mobility, which is considered as a candidate material for application in optoelectronics. Several reviews on WO₃ and its derivatives for various applications dealing with electrochemical, photoelectrochemical, hybrid photocatalysts, electrochemical energy storage, and gas sensors have appeared recently. Moreover, the nanostructured transition metal oxides have attracted considerable attention in the past decade because of their unique chemical, photochromic, and physical properties leading to numerous other potential applications. Owing to their distinctive photoluminescence (PL), electrochromic and electrical properties, WO₃ nanostructure−based optical and electronic devices application have attracted a wide range of research interests. This review mainly focuses on the up−to−date progress in different advanced strategies from fundamental analysis to improve WO₃ optoelectric, electrochromic, and photochromic properties in the development of tungsten oxide−based advanced devices for optical and electronic applications including photodetectors, light−emitting diodes (LED), PL properties, electrical properties, and optical information storage. This review on the prior findings of WO₃−related optical and electrical devices, as well as concluding remarks and forecasts will help researchers to advance the field of optoelectric applications of nanostructured transition metal oxides.

Titanium dioxide (TiO₂) is a kind of wide-bandgap semiconductor. Nano-TiO₂ devices exhibit size-dependent and novel photoelectric performance due to their quantum limiting effect, high absorption coefficient, high surface-volume ratio, adjustable band gap, etc. Due to their excellent electronic performance, abundant presence, and high cost performance, they are widely used in various application fields such as memory, sensors, and photodiodes. This article provides an overview of the most recent developments in the application of nanostructured TiO₂-based optoelectronic devices. Various complex devices are considered, such as sensors, photodetectors, light-emitting diodes (LEDs), storage applications, and field-effect transistors (FETs). This review of recent discoveries in TiO₂-based optoelectronic devices, along with summary reviews and predictions, has important implications for the development of transitional metal oxides in optoelectronic applications for researchers.

Tungsten disulfide (WS₂) is a promising material with excellent electrical, magnetic, optical, and mechanical properties. It is regarded as a key candidate for the development of optoelectronic devices due to its high carrier mobility, high absorption coefficient, large exciton binding energy, polarized light emission, high surface-to-volume ratio, and tunable band gap. These properties contribute to its excellent photoluminescence and high anisotropy. These characteristics render WS2 an advantageous material for applications in light-emitting devices, memristors, and numerous other devices. This article primarily reviews the most recent advancements in the field of optoelectronic devices based on two-dimensional (2D) nano-WS₂. A variety of advanced devices have been considered, including light-emitting diodes (LEDs), sensors, field-effect transistors (FETs), photodetectors, field emission devices, and non-volatile memory. This review provides a guide for improving the application of 2D WS₂ through improved methods, such as introducing defects and doping processes. Moreover, it is of great significance for the development of transition-metal oxides in optoelectronic applications.

The pervasive issue of metal corrosion in various industrial environments, especially in marine settings, incurs significant economic costs and hazardous failures. Traditional protection methods, although diverse, fall short in durability and environmental adaptability, necessitating advanced solutions, such as two-dimensional (2D) materials, including graphene, layered double hydroxides, boron nitride, MXenes, and MoS2. These materials offer exceptional barrier properties against corrosive agents due to their high surface area and minimal thickness, enhancing the lifespan and reliability of metal assets under harsh conditions. Innovations such as self-repairing coatings and advanced application techniques, such as automated spraying and rapid photocuring, further augment their effectiveness. In this Review, recent advancements in the development and application of 2D material-enhanced coatings are reviewed, underscoring their potential in revolutionizing marine corrosion protection through improved performance metrics and sustainability. The challenges and prospects of these novel materials are also discussed, highlighting the need for further research to overcome application hurdles and realize their full potential in industrial uses.

The ultrafine biosensing technology reveals the mechanisms of various biochemical reactions in cells and the causes of complex diseases through the detection of cellular and subcellular structures. It has an irreplaceable role in the early diagnosis of diseases and in the evaluation of the effectiveness of drug therapy. Due to the complex media composition and ultrafine size of biological cells, traditional sensing technologies can hardly shoulder this difficult task. Nanodiamond (ND) is chemically inert, biocompatible, and nanoscale in size; therefore, it is a safe, non-invasive tool for intracellular sensing. In this Review, we will present the properties of nitrogen vacancy centers, silicon vacancy centers in ND, functionalization of ND, and brief principles of sensing, as well as the latest applications, opportunities, and challenges of ND biosensing.

Diamond holds promise for optoelectronic devices working in high-frequency, high-power and high-temperature environments, for example in some aspect of nuclear energetics industry processing and aerospace due to its wide bandgap (5.5 eV), ultimate thermal conductivity, high-pressure resistance, high radio frequency and high chemical stability. In the last several years, p-type B-doped diamond (BDD) has been fabricated to heterojunctions with all kinds of non-metal oxide (AlN, GaN, Si and carbon-based semiconductors) to form heterojunctions, which may be widely utilized in various optoelectronic device technology. This article discusses the application of diamond-based heterostructures and mainly writes about optoelectronic device fabrication, optoelectronic performance research, LEDs, photodetectors, and high-electron mobility transistor (HEMT) device applications based on diamond non-metal oxide (AlN, GaN, Si and carbon-based semiconductor) heterojunction. The discussion in this paper will provide a new scheme for the improvement of high-temperature diamond-based optoelectronics.