Tungsten disulfide (WS₂) is a promising material with excellent electrical, magnetic, optical, and mechanical properties. It is regarded as a key candidate for the development of optoelectronic devices due to its high carrier mobility, high absorption coefficient, large exciton binding energy, polarized light emission, high surface-to-volume ratio, and tunable band gap. These properties contribute to its excellent photoluminescence and high anisotropy. These characteristics render WS2 an advantageous material for applications in light-emitting devices, memristors, and numerous other devices. This article primarily reviews the most recent advancements in the field of optoelectronic devices based on two-dimensional (2D) nano-WS₂. A variety of advanced devices have been considered, including light-emitting diodes (LEDs), sensors, field-effect transistors (FETs), photodetectors, field emission devices, and non-volatile memory. This review provides a guide for improving the application of 2D WS₂ through improved methods, such as introducing defects and doping processes. Moreover, it is of great significance for the development of transition-metal oxides in optoelectronic applications.

Solar cells represent a promising innovation in energy storage, offering not only exceptional cleanliness and low cost but also a high degree of flexibility, rendering them widely applicable. In recent years, scientists have dedicated substantial efforts to enhancing the performance of solar cells, aiming to drive sustainable development and promote clean energy applications. One approach that has garnered significant attention is strain engineering, which involves the adjustment of material microstructure and organization through mechanical tensile or compressive strain, ultimately serving to enhance the mechanical properties and performance stability of materials. This paper aims to provide a comprehensive review of the latest advancements in the application of strain engineering in solar cells, focused on the current hot research area—perovskite solar cells. Specifically, it delves into the origins and characterization of strain in solar cells, the impact of strain on solar cell performance, and the methods for regulating stable strain. Furthermore, it outlines strategies for enhancing the power conversion efficiency (PCE) and stability of solar cells through strain engineering. Finally, the paper conducts an analysis of the challenges encountered in the development process and presents a forward-looking perspective on further enhancing the performance of solar cells through strain engineering.

Photodetectors have undergone widespread, gradual application. Correlation detectors with varying properties are used in diverse fields. This review systematically summarizes the principles, properties, and applications of various photoelectric detectors reported in the past five years, compares their similarities and differences, and further discusses their respective advantages and disadvantages, applicable scenarios, and development prospects. The review covers self-powered detectors, which are very convenient and widely used in consumer electronics and portable wearable devices, and discusses the structural design and photoelectric performance of devices based on P–N junctions, perovskites, silicon–polymer hybrid composites, graphene, hybrid graphene/PbS quantum dot systems, and other novel material architectures. Compound photoelectric detectors enable multifunctional integration and intellectualization. At the same time, their high sensitivity and broad-spectrum response can expand the detection wavelength range to cover the ultraviolet, visible, and infrared bands and enhance the detection of weak optical signals. Finally, this review summarizes current challenges, including cumbersome fabrication processes, susceptibility of detection stability to environmental interference, and limited functionality, and focuses on recent advances in various photodetectors, where breakthroughs are expected.

Two-dimensional (2D) n-MoS₂ nanosheets (NSs) synthesized via the sol–gel method were deposited onto p-type heavily boron-doped diamond (BDD) film to form a n-MoS₂/p-degenerated BDD (DBDD) heterojunction device. The PL emission results for the heterojunction suggest strong potential for applications using yellow-light-emitting optoelectronic devices. From room temperature (RT) to 180 °C, the heterojunction exhibits typical rectification characteristics with good results for thermal stability, rectification ratio, forward current decrease, and reverse current increase. Compared with the n-MoS₂/p-lightly B-doped (non-degenerate) diamond heterojunction, the heterojunction demonstrates a significant improvement in both its rectification ratio and ideal factor. At 100 °C, the rectification ratio reaches the maximum value and is considered an ideal high temperature for achieving optimal heterojunction performance. When the temperature exceeds 140 °C, the heterojunction transforms into the Zener diode. The heterojunction’s electrical temperature dependence is due to the Fermi level shifting resulting in the weakening of the carrier interband tunneling injection. The n-MoS₂ NSs/p-DBDD heterojunction will broaden future research application prospects in the field of high-temperature consumption in future optoelectronic devices.

Two-dimensional (2D) n-MoS2 nanosheet (NSs) synthesized by sol-gel method was deposited on p-type heavily boron-doped diamond (BDD) film to form n-MoS2/p-degenerated BDD (DBDD) heterojunction device. The PL emission of the heterojunction exhibits a good prospect in the application of yellow light-emitting optoelectronic devices. From room temperature (RT) to 180℃, the heterojunction all exhibits typical rectification characteristics with good thermal stability, the rectification ratio and forward current decrease, the reverse current increase. Compared with the n-MoS2/p-lightly B-doped (non-degenerate) diamond heterojunction, the heterojunction demonstrates a significant improvement in both rectification ratio and ideal factor. At 100°C, the rectification ratio reaches the maximum value and is considered an ideal high temperature for achieving optimal heterojunction performance. When the temperature exceeds 140 ℃, the heterojunction transforms into the Zener diode. The heterojunction electrical temperature dependence is due to the Fermi level shifting resulting in the weakening of the carrier interband tunneling injection. The n-MoS2 NSs/p-DBDD heterojunction will broaden the subsequent research application prospects in the field of high-temperature consumption of future optoelectronic devices.