The recent growth of Artificial Neural Networks fueled the design of numerous Artificial Intelligence (AI) dedicated hardware implementations. High power dissipation, computational complexity, and large area footprints currently limit CMOS based real-time embedded AI applications. In this work, we design and simulate through SPICE, for the first time, an artificial analog neuron based on the molecular Field-Effect Transistor (molFET) technology. MolFETs are described by a circuital model whose physical characteristics are extracted from atomistic simulations. The designed neuron is a single column of a crossbar-like circuit representing a layer of seven parallel neurons. The drain currents sum up in a soma-like circuit - modelled through a comparator - and trigger the output pulses. We demonstrate the advantages of the molFET in terms of area, power, and speed by comparing it with a conventional MOSFET implementation. The results confirm the molecular technology is a promising candidate for accomplishing high neuron throughput capability and massive redundancy, still providing high energy efficiency. The obtained results foster further investigation of molFET technology both at the device and circuit level.

NanoSheet-Gate-All-Around-FETs (NS-GAAFETs) are commonly recognized as the future technology to push the digital node scaling into the sub-3 nm range. NS-GAAFETs are expected to replace FinFETs in a few years, as they provide highly electrostatic gate control thanks to the GAA structure, with four sides of the NS channel entirely enveloped by the gate. At the same time, the NS rectangular cross-section is demonstrated to be effective in its driving strength thanks to its high saturation current, tunable through the NS width used as a design parameter. In this work, we develop a NS-GAAFET compact model and we use it to link peculiar single-device parameters to digital circuit performance. In particular, we use the well-known BSIM-CMG core solver for multigate transistors as a starting point and develop an ad hoc resistive and capacitive network to model the NS-GAAFET geometrical and physical structure. Then, we employ the developed model to design and optimize a digital inverter and a five-stage ring oscillator, which we use as a performance benchmark for the NS-GAAFET technology. Through Cadence Virtuoso SPICE simulations, we investigate the digital NS-GAAFET performance for both high-performance and low-power nodes, according to the average future node present in the International Roadmap for Devices and Systems. We focus our analysis on the main different technological parameters with regard to FinFET, i.e., the inner and outer spacers. Our results highlight that in future technological nodes, the choice of alternative low-K dielectric materials for the NS spacers will assume increasing importance, being as relevant, or even more relevant, than photolithographic alignment and resolution at the sub-nm scale.

Food contamination by aflatoxins is an urgent global issue due to its high level of toxicity and the difficulties in limiting the diffusion. Unfortunately, current detection techniques, which mainly use biosensing, prevent the pervasive monitoring of aflatoxins throughout the agri-food chain. In this work, we investigate, through ab initio atomistic calculations, a pyrrole-based Molecular Field Effect Transistor (MolFET) as a single-molecule sensor for the amperometric detection of aflatoxins. In particular, we theoretically explain the gate-tuned current modulation from a chemical–physical perspective, and we support our insights through simulations. In addition, this work demonstrates that, for the case under consideration, the use of a suitable gate voltage permits a considerable enhancement in the sensor performance. The gating effect raises the current modulation due to aflatoxin from 100% to more than ${10}^3÷{10}^4$%. In particular, the current is diminished by two orders of magnitude from the μA range to the nA range due to the presence of aflatoxin B1. Our work motivates future research efforts in miniaturized FET electrical detection for future pervasive electrical measurement of aflatoxins.

We investigate through atomistic calculation the electronic structure and transport properties of 3-phenylethynylene (OPE3), 7-phenylvynylene (OPV7), and 3,3paraCyclophane (pCp)-based molecules. We reveal and analyze the Destructive Quantum Interference (DQI) phenomenon for the pCp single-molecule junction. The provided explanation of DQI via the dominant concurrence of inter-orbital and intra-orbital interference may support DQI engineering through the chemical synthesis of ad hoc molecular channel. Furthermore, we propose a Back gate Biasing-based method for the ON/OFF CUrrent Ratio Enhancement of the single-molecule Field-Effect transistor via the control of DQI (BBB-CURE-DQI). As an important outcome of the proposed method, an ON/OFF current ratio of $\text{10}^{\text{3}}$ is achieved for pCp single-molecule FET. This value is orders of magnitude larger than typical values presented in the literature. The benefit of the DQI and the effectiveness of the BBB-CURE-DQI method are finally demonstrated at the circuital level by SPICE simulations of digital inverters implemented with the investigated molecules. Our analysis and results motivate the importance of future research investment for DQI manipulation via chemical synthesis and successive control to enable single-molecule FET-based nanocomputing applications.

We investigate through ab-initio simulations the gold-8PyrroleDiThiol-gold (Au-8PyDT) molecular quantum dot as an amperometric single-molecule sensor for the aflatoxin B1 (AFB1) detection. We study the chemical-physical interaction of AFB1 with the Au-8PyDT, and we analyze the transport characteristics of the four most probable adsorption configurations. We also investigate the link between transport modulation and adsorption mechanism. Interestingly, the investigated sensor exhibits conduction features similar to other types of quantum dot-based sensors. A significant current suppression occurs in all cases, with almost two orders of magnitude of current decrease in presence of AFB1 at 0.6 V. Considering the sensor robustness w.r.t. the specific adsorption configurations, our study motivates future research in this field.

Tunnel Field-Effect Transistors (TFETs) have been considered one of the most promising technologies to complement or replace CMOS for ultra-low-power applications, thanks to their subthreshold slope below the well-known limit of 60 mV/dec at room temperature holding for the MOSFET technologies. Nevertheless, TFET technology still suffers of ambipolar conduction, limiting its applicability in digital systems. In this work, we analyze through SPICE simulations, the impact of the symmetric and asymmetric ambipolarity in failure and power consumption for TFET-based complementary logic circuits. Our results clarify the circuit-level effects induced by the ambipolarity feature, demonstrating that it affects the correct functioning of logic gates and strongly impacts power consumption. We believe that our outcomes motivate further research towards technological solutions for ambipolarity suppression in TFET technology for near-future ultra-low-power applications.