A neuromorphic phototransistor based on nanowire‐patterned diketopyrrolo‐pyrrole‐dithienylthieno[3,2‐b]thiophene (DPP‐DTT) is reported. The nanowires, well‐aligned with a width of 460 nm, spacing of 8–11 µm, and height of ≈80 nm, are fabricated using the stamping method of soft lithography and exhibit optically stimulated synaptic behavior. Under blue illumination (455 nm, 0.55 mW cm−2), a photogating effect arises at the DPP‐DTT/SiO2 interface, leading to threshold voltage shifts up to 6.4 V as a result of electron trapping at the interface. Negative gate pulses (−7 V) facilitate recombination of the trapped electrons, inducing detrapping and consequently leading to a decrease in the threshold voltage. These two behaviors effectively emulate the processes of potentiation and depression. Efficient trap–detrapping dynamics are facilitated by the unique geometry of the nanowire. Synaptic plasticity is modulated by adjusting stimulus intensity (light pulse: 0.26–1.42 mW cm ⁻² , gate pulse: −6–−9 V), duration (0.3–2.1 s), frequency (0.47–3.33 Hz), and repetition (1–40 cycles), supporting transitions from short‐ to long‐term behavior. The device is evaluated through artificial intelligence classification tasks, including image recognition and time‐dependent physiological analysis. It achieves the classification accuracies of 97.4% for MNIST, 93.4% for electromyography (7 classes), 89.0% for electrocardiography (5 classes), and 83.8% for CIFAR‐10.

Conjugated polymers have emerged as promising materials for next-generation electronics. However, in spite of having several advantages, such as a low cost, large area processability and flexibility, polymer-based electronics have their own limitations concerning low electrical performance. To achieve high-performance polymer electronic devices, various strategies have been suggested, including aligning polymer backbones in the desired orientation. In the present paper, we report a simple patterning technique using a polydimethylsiloxane (PDMS) mold that can fabricate highly aligned nanowires of a diketopyrrolopyrrole (DPP)-based donor–acceptor-type copolymer (poly (diketopyrrolopyrrole-alt-thieno [3,2-b] thiophene), DPP-DTT) for high-performance field effect transistors. The morphology of the patterns was controlled by changing the concentration of the DPP-based copolymer solution (1, 3, 5 mg mL⁻¹). The molecular alignment properties of three different patterns were observed with a polarized optical microscope, polarized UV-vis spectroscopy and an X-ray diffractometer. DPP-DTT nanowires made with 1 mg mL⁻¹ solution are highly aligned and the polymer field-effect transistors based on nanowires exhibit more than a five times higher charge carrier mobility as compared to spin-coated film-based devices.

We developed solution-processed hybrid photodetectors with a poly (9-vinylcarbazole)/zinc oxide nanoparticle photoactive layer and a poly (vinylidene fluoride-co-trifluoroethylene) ferroelectric copolymer buffer layer on flexible plastic substrates. The presence of a ferroelectric-poling interface layer significantly enhanced the charge transfer and responsivity of the photodetectors under ultraviolet (UV, 365 nm) light exposure. The responsivity of the device reached 250 mA/W at a reverse bias of 5 V and incident light intensity of 27.5 μW/cm². This responsivity was four times higher than that of a device without the ferroelectric copolymer layer (64 mA/W) under the same conditions. The response time of the device to incident UV light also improved from 322 to 34 ms with the addition of the ferroelectric copolymer layer. In addition, the flexible device exhibited a stable performance in an air environment up to a maximum strain of 0.3 under bending stress. Finally, a UV-light-responsive memory device was successfully fabricated by using the developed hybrid photodetector and liquid crystals. This device showed a colour change from white to black upon UV illumination, and the on-state of the device was maintained for 30 s without light exposure owing to the polarization of poly (vinylidene fluoride-co-trifluoroethylene).

Solution-processable materials such as conjugated polymers are considered promising candidates for next-generation electronic devices due to their compatibility with low-cost, large-area, and flexible fabrication techniques. However, polymer-based electronic devices often suffer from inherently low electrical performance, which remains a significant challenge.In this study, we present a simple and effective patterning method using a polydimethylsiloxane (PDMS) mold to fabricate highly aligned nanostructure channel devices based on conjugated polymers poly(diketopyrrolopyrrole-alt-thieno[3,2-b]thiophene) (DPP-DTT). In nanopatterned conjugated polymers, the alignment of molecular chains enables charge carriers to move efficiently and rapidly along the direction of the chains. Nanoscale channel structures induce field enhancement effects at the interface. This effect reduces the Schottky barrier height at the metal-semiconductor interface. Furthermore, by adopting an asymmetric electrode configuration with gold (Au) and aluminum (Al), we implement bandgap engineering through controlled energy level alignment to modulate hole and electron injection behaviors. Consequently, by controlling the factors, the rectification characteristics of nanostructure channel diode devices based on conjugated polymers were improved.